| PART |
Description |
Maker |
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M464S6453DKS |
64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S172 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data sheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M470L3223BT0 |
32Mx64 200pin DDR SDRAM SODIMM based on 32Mx8 Data Sheet
|
Samsung Electronic
|
| M464S1654BT1-C1H M464S1654BT1-C1L M464S1654BT1-L1L |
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W3EG6464S-BD4 |
512MB - 64Mx64 DDR SDRAM UNBUFFERED w/PLL 512MB 64Mx64 DDR SDRAM的缓冲瓦锁相
|
STMicroelectronics N.V.
|
| HYS64D64020HDL-5-B HYS64D64020HDL-6-B |
DDR SDRAM Modules - 512 MB (64Mx64) PC3200 2-bank
DDR SDRAM Modules - 512 MB (64Mx64) PC2700 2-bank
|
Infineon
|
| WED3DG6466V75D1 WED3DG6466V7D1 WED3DG6466V-D1 WED3 |
512MB -64Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| WED3DG6466V-AD1 WED3DG6466V7AD1 WED3DG6466V10AD1 W |
512MB - 64Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
