| PART |
Description |
Maker |
| M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S172 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data sheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M470L1714BT0-CLB0 M470L1714BT0-CLA0 M470L1714BT0-C |
16Mx64 200pin DDR SDRAM SODIMM based on 8Mx16 Data Sheet
128MB DDR SDRAM MODULE(16Mx64 based on 8Mx16 DDR SDRAM)
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M366S6453DTS |
64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| M366S6453CTU |
64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| NT128S64VH4A0GM0-7K |
128Mb: 16Mx64 SDRAM SODIMM based 16Mx16, 4bands, 8K refresh, 3.3V synchronous DRAMs with SPD
|
NANYA
|
| M464S0824ETS |
8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| M464S0824FTS |
8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| HYS64D64020GDL-6-A HYS64D64020GDL-7-A HYS64D64020G |
512MB (64Mx64) PC2100 2-bank 12MB的（64Mx64）PC2100 2银行
512MB (64Mx64) PC1600 2-bank 12MB的（64Mx64）PC1600 2银行
DDR SDRAM Modules - 512MB (64Mx64) PC2100 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank
|
Infineon Technologies AG
Unisonic Technologies Co., Ltd.
|
| M464S6554BTS-CL7A M464S3354BTS M464S3354BTS-C7A M4 |
SDRAM Unbuffered SODIMM 内存缓冲SODIMM
SDRAM Unbuffered SODIMM 内存缓冲的SODIMM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M470T6464AZ3 M470T5669AZ0-CLE6_D5_CC M470T2864AZ3- |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC
|
Samsung semiconductor
|
| HYS64D64020GU-7-B HYS64D64320GU-5-B HYS64D64320GU- |
DDR SDRAM Modules - 512MB (64Mx64) PC2100 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2700 2-bank
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank
DDR SDRAM Modules - 512MB (32Mx72) PC2100 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
184-Pin Unbuffered Dual-In-Line Memory Modules
DDR SDRAM Modules - 256MB (32Mx64) PC2100 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC3200 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank
DDR SDRAM Modules - 256MB (32Mx64) PC3200 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC3200 2-bank
|
Infineon
|
