| PART |
Description |
Maker |
| NTE5513 NTE5511 NTE5512 |
Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 400V. Forward current RMS Ifrms = 5A.
Silicon Controlled Rectifier (SCR) 5 Amp
|
NTE[NTE Electronics]
|
| 70C80B 70C50B 70C120B 70C60B 70C100B 70C 70C80BF 7 |
Silicon Controlled Rectifier
3-Pin Microprocessor Reset Circuits
Silicon Controlled Rectifier 110 A, SCR, TO-208AD
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| 2N3670 2N4103 2N3669 2N3668 |
12.5A silicon controlled rectifier. Vrm(non-rep) 330V.
12.5A SILICON CONTROLLED RECTIFIERS
|
General Electric Solid State
GE[General Semiconductor]
GE Security, Inc.
|
| CBR3A-P060 CBR10A-J080 CBR6A-080 CBR10A-J020 CBR10 |
Bridge Rectifiers, Controlled Avalanche 1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 10 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers/ Controlled Avalanche
Leaded Bridge Rectifier Controlled Avalanche
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| P131 P133 |
Silicon Controlled Rectifier, 28 A, 400 V, SCR
Silicon Controlled Rectifier, 28 A, 800 V, SCR
|
Vishay Semiconductors
|
| BT152-600 BT152 |
600V Vdrm 20A Sensitive Gate Silicon Controlled Rectifier, 1.7@40AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage
Silicon Controlled Rectifiers
|
SEMIWELL[SemiWell Semiconductor]
|
| NTE5558 NTE5550 NTE5552 NTE5554 |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A.
Silicon Controlled Rectifiers
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
|
NTE[NTE Electronics]
|
| 1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns)
(1N2xxx) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
(1N4525 - 1N4529) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| MCR106-6G MCR106-8G MCR106-8 MCR106 MCR106-6 MCR10 |
Sensitive Gate Silicon Controlled Rectifier; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500 4 A, 600 V, SCR, TO-225AA
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
ONSEMI[ON Semiconductor]
|
| IRKL91-14S90 KT91-08S90 KT91-14S90 KT92-08 |
Silicon Controlled Rectifier, 141.3 A, 1400 V, SCR, TO-240AA
Silicon Controlled Rectifier, 141.3 A, 800 V, SCR, TO-240AA
|
Vishay Semiconductors
|
| R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
2200 A, 800 V, SILICON, RECTIFIER DIODE
2200 A, 600 V, SILICON, RECTIFIER DIODE
2200 A, 400 V, SILICON, RECTIFIER DIODE
450 A, 150 V, SILICON, RECTIFIER DIODE
550 A, 50 V, SILICON, RECTIFIER DIODE
550 A, 150 V, SILICON, RECTIFIER DIODE
2500 A, 1300 V, SILICON, RECTIFIER DIODE
300 A, 900 V, SILICON, RECTIFIER DIODE
1800 A, 200 V, SILICON, RECTIFIER DIODE
1200 A, 3100 V, SILICON, RECTIFIER DIODE
2000 A, 2300 V, SILICON, RECTIFIER DIODE
3600 A, 2300 V, SILICON, RECTIFIER DIODE
100 A, 150 V, SILICON, RECTIFIER DIODE
|
POWEREX INC
|
| 15112GOA 15102GOA 15104GOA 15102GOAIL 15110GOA 151 |
Silicon Controlled Rectifier
|
Microsemi Corporation
|
|
