| PART |
Description |
Maker |
| 2N3670 2N4103 2N3669 2N3668 |
12.5A silicon controlled rectifier. Vrm(non-rep) 330V.
12.5A SILICON CONTROLLED RECTIFIERS
|
General Electric Solid State
GE[General Semiconductor]
GE Security, Inc.
|
| CBR3A-P060 CBR10A-J080 CBR6A-080 CBR10A-J020 CBR10 |
Bridge Rectifiers, Controlled Avalanche 1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 10 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers/ Controlled Avalanche
Leaded Bridge Rectifier Controlled Avalanche
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| CS218-35D CS218-35PB CS218-35B CS218-35N CS218-35M |
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 400 V, SCR, TO-218
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 200 V, SCR, TO-218
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 600 V, SCR, TO-218
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 800 V, SCR, TO-218
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 1000 V, SCR, TO-218
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 1200 V, SCR, TO-218
|
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| BYV28-50 BYV28-600 BYV28 BYV28-500 BYV28-100 BYV28 |
From old datasheet system
Ultra fast low-loss controlled avalanche rectifiers 1.9 A, 50 V, SILICON, RECTIFIER DIODE
Ultra fast low-loss controlled avalanche rectifier(超快速低损耗控制的雪崩整流 1.9 A, 200 V, SILICON, RECTIFIER DIODE
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| BT151-600 BT151 |
600V Vdrm 12A Sensitive Gate Silicon Controlled Rectifier, 1.7@23AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage
Silicon Controlled Rectifiers
|
SemiWell Semiconductor
|
| NTE5558 NTE5550 NTE5552 NTE5554 |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A.
Silicon Controlled Rectifiers
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
|
NTE[NTE Electronics]
|
| 2N5064RLRA 2N5064RLRM 2N5064RLRMG 2N5061RLRM 2N506 |
Thyristor .8A 100V
Connector Housing; Series:MicroClasp; No. of Contacts:3; Gender:Female; Body Material:Nylon 6/6; No. of Rows:1; Pitch Spacing:0.079" RoHS Compliant: Yes 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 60 V, SCR, TO-92
Silicon Controlled Rectifier .8A 25V
Thyristor .8A 200V
Thyristor .8A 50V
|
ONSEMI[ON Semiconductor]
|
| IRKH41-12 IRKH41-14 |
Silicon Controlled Rectifier, 62.8 A, 1200 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA
|
Vishay Semiconductors
|
| TYN1004 TYN804 |
V(drm): 1000V; silicon controlled rectifier (SCR)
V(drm): 800V; silicon controlled rectifier (SCR)
|
SGS Thomson Microelectronics
|
| 1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns)
(1N2xxx) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
(1N4525 - 1N4529) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| SM12CXC220 SM34CXC614 SM36CXC604 SM38CXC624 SM38CX |
860 A, 1200 V, SILICON, RECTIFIER DIODE
1160 A, 3400 V, SILICON, RECTIFIER DIODE
1010 A, 3600 V, SILICON, RECTIFIER DIODE
1106 A, 3800 V, SILICON, RECTIFIER DIODE
2640 A, 3800 V, SILICON, RECTIFIER DIODE
1106 A, 3400 V, SILICON, RECTIFIER DIODE
435 A, 1500 V, SILICON, RECTIFIER DIODE
440 A, 600 V, SILICON, RECTIFIER DIODE
1160 A, 3800 V, SILICON, RECTIFIER DIODE
1160 A, 4200 V, SILICON, RECTIFIER DIODE
940 A, 800 V, SILICON, RECTIFIER DIODE
940 A, 1800 V, SILICON, RECTIFIER DIODE
940 A, 400 V, SILICON, RECTIFIER DIODE
940 A, 1000 V, SILICON, RECTIFIER DIODE
940 A, 600 V, SILICON, RECTIFIER DIODE
940 A, 1600 V, SILICON, RECTIFIER DIODE
1106 A, 4000 V, SILICON, RECTIFIER DIODE
310 A, 2600 V, SILICON, RECTIFIER DIODE
370 A, 2600 V, SILICON, RECTIFIER DIODE
2700 A, 2600 V, SILICON, RECTIFIER DIODE
860 A, 1400 V, SILICON, RECTIFIER DIODE
440 A, 400 V, SILICON, RECTIFIER DIODE
440 A, 800 V, SILICON, RECTIFIER DIODE
435 A, 1600 V, SILICON, RECTIFIER DIODE
435 A, 1800 V, SILICON, RECTIFIER DIODE
527 A, 3200 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| MCR718 MCR718T4 MCR716T4 MCR716 |
Silicon Controlled Rectifier (Reverse Blocking Thyristors)
Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS)
Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 - 600 VOLTS)
|
ONSEMI[ON Semiconductor]
|
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