| PART |
Description |
Maker |
| BCR16CM |
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
|
Renesas Electronics Corporation
|
| BCR12KM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR6PM-12 CR6PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| MGF0911A 0911A |
From old datasheet system
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| BCR16A BCR16B BCR16C BCR16E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| MS20 |
MIS/MOS Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor
|
AVX Corporation
|
| MGF0905A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| KIA34063AF |
SEMICONDUCTOR
|
KEC(Korea Electronics)
|
| BZX84C8V2LT1 BZX84C9V1LT1 BZX84C10LT1 BZX84C11LT1 |
SEMICONDUCTOR
|
ETL[E-Tech Electronics LTD]
|
