| PART |
Description |
Maker |
| K9F2808U0M- K9F2808U0M-YCB0 K9F2808U0M-YIB0 |
16M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F2808Q0C K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9F2808 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
16M x 8 bit NAND flash memory, 2.7 - 3.6V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F2808U0M-YIB0 K9F2808U0M-YCB0 |
16M x 8 Bit NAND Flash Memory 1,600 × 8位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K9F5608UOC K9F5616DOC K9F5616UOC K9F5608QOC |
(K9F5608xOC / K9F5616xOC) 32M x 8 Bit 16M x 16 Bit NAND Flash Memory
|
Samsung semiconductor
|
| K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MX25L1605ZM MX25L1605ZMC-20 MX25L1605ZMC-20G MX25L |
16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY 16M X 1 FLASH 2.7V PROM, DSO8
|
Macronix International Co., Ltd.
|
| MBM29DL161BE MBM29DL161TE MBM29DL161BE-70 MBM29DL1 |
16M (2MX8/1MX16) BIT Dual Operation
FLASH MEMORY 16M (2M x 8/1M x 16) BIT Dual Operation
Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation
|
Fujitsu Microelectronics
|
| LH28F016SCHB LH28F016SCHB-L95 LHF16C13 LH28F016SCR |
LH28F016SCHSR-L120 16M (2M x 8)Smart Voltage Flash Memory 40 pin STSOP
LH28F016SCHSR-L150 16M (2M x 8)Smart Voltage Flash Memory 40 pin STSOP
LH28F016SCN-L100 16M (2M x 8)Smart Voltage Flash Memory
16Mbit Flash Memory
LH28F016SCR-L100 16M (2M x 8)Smart Voltage Flash Memory
LH28F016SCR-L120 16M (2M x 8)Smart Voltage Flash Memory
LH28F016SCR-L95 16M (2M x 8)Smart Voltage Flash Memory
LH28F016SCHSR-L100 16M (2M x 8)Smart Voltage Flash Memory 40 pin STSOP
|
SHARP[Sharp Electrionic Components]
|
| MB84VD21181-85-PBS MB84VD21181-85-PTS MB84VD21191- |
16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM
Stacked MCP (multi-chip package) flash memory & SRAM 16M(x8/x16) flash memory & 4M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
| MBM29F016A-90PFTN MBM29F016A-90PFTR MBM29F016A-12 |
FLASH MEMORY 16M (2M x 8) BIT
CMOS 16M (2M x 8) bit
|
Fujitsu Microelectronics
|
| MX69F1602C3TXBI-70 MX69F1602C3TXBI-90 |
16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY SPECIALTY MEMORY CIRCUIT, PBGA66
|
Macronix International Co., Ltd.
|
| AM29LV256MH40FF L256ML113RI AM29LV256MH30FF AM29LV |
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 16M X 16 FLASH 3V PROM, 120 ns, PDSO56
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 16M X 16 FLASH 3V PROM, 110 ns, PDSO56
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 256兆位6 M中的x 16-Bit/32 M中的x 8位）MirrorBitTM 3.0伏特，只有统一闪存部门与VersatileI /价外控制
|
Advanced Micro Devices, Inc.
|
