| PART |
Description |
Maker |
| S558-5999-Q2 |
Xfmr Module 1000 Mbps DATACOM TRANSFORMER FOR 10/100/1000 BASE-T; ETHERNET APPLICATION(S)
|
Bel Fuse, Inc.
|
| R76QD1100SE40J |
Capacitor, film, 1000 pF, /-5% Tol, -55/ 105C, General Purpose, 1000 VDC@85C, Lead Spacing=7.5 mm
|
Kemet Corporation
|
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
| T82F096562DN T82F056562DN F036542DN F0365B2DN |
1000 A, 900 V, SCR
1000 A, 500 V, SCR
1000 A, 300 V, SCR
|
POWEREX INC
|
| 1N4942GP11 1N4948GP-AP |
1 Amp Glass Passivated Fast Recovery Rectifier 200 - 1000 Volts
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 ROHS COMPLIANT, PLASTIC PACKAGE-2
|
Micro Commercial Components, Corp.
|
| 10A030 |
3 W, 20 V, 1000 MHz common emitter transistor
3 Watts, 20 Volts, Class A Linear to 1000 MHz
|
GHz Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| SBTC-2-10-75_75L SBTC-2-10-75 SBTC-2-10-75L SBTC-2 |
Power Splitter/Combiners 2 Way-0??75蟹 10 to 1000 MHz
Power Splitter/Combiners 2 Way-075з 10 to 1000 MHz 功分合路2路，0Σ75з101000兆赫
Power Splitter/Combiners 2 Way-0° 75 10 to 1000 MHz
Power Splitter/Combiners 2 Way-0∑ 75з 10 to 1000 MHz
Power Splitter/Combiners 2 Way-0 75 10 to 1000 MHz
|
MINI[Mini-Circuits]
|
| SCA-4-10 |
Power Splitter/Combiner 4 Way-050з 5 to 1000 MHz 5 MHz - 1000 MHz RF/MICROWAVE COMBINER, 2.5 dB INSERTION LOSS
Power Splitter/Combiner 4 Way-0∑ 50з 5 to 1000 MHz
Power Splitter/Combiner 4 Way-0° 50?/a> 5 to 1000 MHz
|
MINI[Mini-Circuits]
|
| CS241020 |
Fast Recovery Single Diode Module 200 Amperes/1000 Volts 200 A, 1000 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| DS1004Z-3T LFSCM3GA15EP1-7F256C LFSCM3GA15EP1-7F90 |
FPGA, 56 CLBS, 15000 GATES, 1000 MHz, PBGA256 17 X 17 MM, LEAD FREE, FPBGA-256
FPGA, 56 CLBS, 15000 GATES, 1000 MHz, PBGA900 31 X 31 MM, LEAD FREE, FPBGA-900
FPGA, 104 CLBS, 25000 GATES, 1000 MHz, PBGA900 31 X 31 MM, FPBGA-900
FPGA, 56 CLBS, 15000 GATES, 1000 MHz, PBGA256 17 X 17 MM, FPBGA-256
FPGA, 216 CLBS, 40000 GATES, 1000 MHz, PBGA1020 33 X 33 MM, LEAD FREE, FCBGA-1020
FPGA, 308 CLBS, 80000 GATES, 1000 MHz, CBGA1704 42.5 X 42.5 MM, CERAMIC, FCBGA-1704
FPGA, 308 CLBS, 80000 GATES, 1000 MHz, PBGA1152 35 X 35 MM, FCBGA-1152
FPGA, 216 CLBS, 40000 GATES, 1000 MHz, PBGA1152 35 X 35 MM, FCBGA-1152
FPGA, 216 CLBS, 40000 GATES, 1000 MHz, PBGA1152 35 X 35 MM, LEAD FREE, FCBGA-1152
FPGA, 104 CLBS, 25000 GATES, 1000 MHz, PBGA1020
|
Maxim Integrated Products
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
|
