PART |
Description |
Maker |
MJE240 MJE243 MJE252 MJE254 MJE241 MJE242 MJE244 M |
Leaded Power Transistor General Purpose COMPLEMENTARY SILICON POWER TRANSISTORS 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126 (MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS From old datasheet system
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Central Semiconductor, Corp. CENTRAL[Central Semiconductor Corp] http://
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PMD18K100 |
SILICON POWER DARINGTON TRANSISTORS COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
|
Central Semiconductor C...
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MJD122 MJD127 MJD127T4 ON1997 MJD122-1 MJD122T4 MJ |
From old datasheet system SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATTS Complementary Darlington Power Transistors
|
Motorola, Inc. MOTOROLA[Motorola Inc] ONSEMI[ON Semiconductor]
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BC737 BC738 |
PNP SILICON AF MEDIUM POWER TRANSISTORS (BC737 / BC738) NPN SILICON AF MEDIUM POWER TRANSISTORS
|
Micro Electronics
|
EMF5XV6T5 EMF5XV6T5G |
Power Management Dual Transistors Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ONSEMI[ON Semiconductor]
|
2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp. BOCA[Boca Semiconductor Corporation]
|
2N6497 2N6498 ON0098 |
POWER TRANSISTORS NPN SILICON 5 AMPERE POWER TRANSISTORS From old datasheet system
|
ONSEMI[ON Semiconductor]
|
2SA963 |
Silicon NPN Power Transistors Silicon PNP Power Transistors
|
Savantic, Inc.
|
2SB531 |
Silicon NPN Power Transistors Silicon PNP Power Transistors
|
Savantic, Inc.
|
MJ21193 MJ21193G MJ21193-13 MJ21194 MJ21194G |
Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS
|
ON Semiconductor
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