PART |
Description |
Maker |
BLS6G2933S-13010 BLS6G2933S-130 BLS6G2933S-130112 |
LDMOS S-band radar power transistor
|
NXP Semiconductors N.V.
|
BLS7G2933S-150 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors N.V.
|
BLS6G3135-12008 BLS6G3135-120-15 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors
|
BLL6H1214LS-500 |
LDMOS L-band radar power transistor
|
NXP Semiconductors
|
BLS6G3135S-120 BLS6G3135-120 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors N.V.
|
BLS6G2731S-130 |
LDMOS S-band radar power transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Duracell Renesas Electronics Corporation
|
PH2729-150M07 PH2729-150M |
S BAND, Si, NPN, RF POWER TRANSISTOR Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100レs Pulse, 10% Duty Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100渭s Pulse, 10% Duty Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty
|
Tyco Electronics
|
BLL6H0514-25 |
LDMOS driver transistor BLL6H0514-25<SOT467C (LDMOST)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,; LDMOS driver transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
AM83135-015 2887 |
Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Brown; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes From old datasheet system RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
0910-300M |
Bipolar/LDMOS Transistor 300 Watts - 50 Volts, 150us, 5% Radar 890 - 1000 MHz
|
Microsemi Corporation ADPOW[Advanced Power Technology]
|