| PART |
Description |
Maker |
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| UQCLEA100DAJME UQCLEA100CAJME UQCLEA100BAJME UQCL5 |
Microwave MLC`s UQ Series High Q Ultra Low ESR MLC
|
AVX Corporation
http://
|
| K8A56EBC K8A57EBC K8A57EZC |
256Mb C-die NOR FLASH
|
Samsung semiconductor
|
| K8P5616UZB |
256Mb B-die Page NOR FLASH
|
Samsung semiconductor
|
| K4T56043QFNBSP K4T56083QFNBSP K4T56083QF K4T56083Q |
256Mb F-die DDR2 SDRAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4H561638F |
DDR SDRAM 256Mb F-die
|
SAMSUNG
|
| K4H560838E K4H560838E-TC_LB3 K4H560438E-TC_LA2 K4H |
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4H561638H-UI/PB0 K4H561638H-UI/PB3 K4H561638H-UI/ |
256Mb H-die DDR SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| H57V2622GMR |
256Mb Dual Die Synchronous DRAM
|
Hynix Semiconductor
|
| K4H560838F K4H561638F-UCCC K4H561638F-UCC4 K4H5608 |
256Mb F-die DDR400 SDRAM Specification 256Mb的的F -模具支持DDR400内存规格
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| TLE5009A16 |
Available as single die and dual die with separate supplies for each die
|
Infineon Technologies A...
|
