PART |
Description |
Maker |
HY57V28820HCLT-8I HY57V28820HCLT-HI HY57V28820HCLT |
4Banks x 4M x 8bits Synchronous DRAM 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 4Banks x 4M x 8bits Synchronous DRAM 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 SDRAM - 128Mb
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
V54C3256164VDUF6I V54C3256404VDUT7I V54C3256164VDU |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
PROMOS TECHNOLOGIES INC
|
V54C3256164VBUS7PC V54C3256164VBUT7 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
PROMOS TECHNOLOGIES INC
|
WEDPN16M64VR-125BC WEDPN16M64VR-100BM WEDPN16M64VR |
125MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM 100MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM 133MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM
|
White Electronic Designs
|
K4S561632J-UC_L50 K4S561632J-UC_L75 K4S561632J-UC_ |
256Mb J-die SDRAM Specification 16M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Samsung semiconductor
|
42S16800A IS42S81600A IS42S16800A IS42S32400A IS42 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM CABLE ASSEMBLY; BNC MALE TO BNC FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; ; *USES STANDARD 50 OHM INTERFACE CONNECTORS* 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
|
Integrated Silicon Solution Inc Integrated Silicon Solution, Inc.
|
KM48S16030A KM48S16030AT-G_F10 KM48S16030AT-G_FA K |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
|
Electronic Theatre Controls, Inc. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
IS42S32160A IS42S32160A-75B IS42S32160A-75BI IS42S |
4M Words x 32 Bits x 4 Banks (512-MBIT) SYNCHRONOUS DYNAMIC RAM 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Integrated Silicon Solution, Inc 天津新技术产业园区管理委员会 INTEGRATED SILICON SOLUTION INC
|
W9825G6JH-6 |
16M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
|
WINBOND ELECTRONICS CORP
|
HY5V56FF-H HY5V56FLF-H |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
HYNIX SEMICONDUCTOR INC
|
V54C3256164VHUJ7I |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
|
PROMOS TECHNOLOGIES INC
|
IS42VM16160D-8BLI IS42VM16160D-8BLI-TR IS42VM16160 |
16M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
|
天津新技术产业园区管理委员会 INTEGRATED SILICON SOLUTION INC
|