| PART |
Description |
Maker |
| PPN0500B 542AB0500 915AB0500MBP |
HEATSINK TO220/218 5.0C/W
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
HEATSINK TO220/218 5.8C/W 散热片TO220/218 5.8摄氏
|
KEMET Corporation
|
| PPL0500B PPL1000B |
HEATSINK TO220/218 5.0C/W
HEATSINK TO220/218 3.1C/W 散热片TO220/218 3.1C /
|
Hamamatsu Photonics K.K.
|
| LS220 |
HEATSINK TO220-TO3P 17.0C-W
|
ETC
|
| SGA-3463 |
HEATSINK TO-218 W/TAB BLACK 直流- 5000兆赫级联硅锗HBT MMIC放大
DC-5000 MHZ CASCADABLE SIGE HBT MMIC AMPLIFIER
|
Stanford Microdevices
|
| 2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE
NPN Epitaxial Base Transistor（TO220 Metal PackageNPN外延晶体管（TO220 金属封装，高可靠性）)
DIODE SCHOTTKY SINGLE 25V 150mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-523 3K/REEL
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| Q6040M9 Q7040M9 Q4040M9 Q2040M9 Q8040M9 Q5040M9 Q2 |
TRIAC|600V V(DRM)|40A I(T)RMS|TO-218
TRIAC|700V V(DRM)|40A I(T)RMS|TO-218
TRIAC|800V V(DRM)|40A I(T)RMS|TO-218
TRIAC|500V V(DRM)|40A I(T)RMS|TO-218
TRIAC|200V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|700V V(DRM)|15A I(T)RMS|TO-220 可控硅| 700V的五（DRM）的| 15A条口（T）的有效值|20
TRIAC|400V V(DRM)|15A I(T)RMS|TO-220
TRIAC|400V V(DRM)|25A I(T)RMS|TO-220
TRIAC|800V V(DRM)|25A I(T)RMS|TO-220
|
Motorola Mobility Holdings, Inc.
|
| HNT640 HNT616 HIT625 HNT216 |
600 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-218
600 V, 25 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-218
200 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-218
|
|
| M68779M |
Silicon MOS FET Power Amplifier, 218-250 MHz 7.0W FM Portable
Silicon MOS FET Power Amplifier / 218-250MHz 7.0W FM PORTABLE
Silicon MOS FET Power Amplifier, 218-250MHz 7.0W FM PORTABLE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 530101B00150 |
For use with TO-218 packages
|
AAVID[Aavid Thermalloy, LLC]
|
| BUV48 |
15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218
|
CENTRAL SEMICONDUCTOR CORP
|
| BUV47A |
9 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-218
|
STMICROELECTRONICS
|
