| PART |
Description |
Maker |
| CTA2P1N-7-F CTA2P1N1 |
COMPLEX TRANSISTOR ARRAY
|
Diodes Incorporated
|
| CTA2P1N-7-F |
COMPLEX TRANSISTOR ARRAY
|
Diodes Inc.
|
| DRDNB16W1 DRDNB16W-7 |
COMPLEX ARRAY FOR RELAY DRIVERS
|
Diodes Incorporated
|
| EMX2809 |
Complex (2-elements) Bipolar Transistor
|
Rohm
|
| M54583 M54583P M54583PNBSP |
From old datasheet system
M54583P Darlington Transistor Array
8 UNIT 400MA DARLINGTON TRANSISTOR ARRAY
|
Mitsubishi Electric Corporation
Mitsubishi Electronics America Inc
Mitsubishi Electric Semiconductor
|
| FMS7G20US60 |
600V, 20A IGBT Module (Compact & Complex Type)
Compact & Complex Module
|
FAIRCHILD[Fairchild Semiconductor]
|
| MUBW6-06A6 |
TRANSISTOR | IGBT POWER MODULE | COMPLEX BRIDGE | 600V V(BR)CES | 7A I(C) 晶体管| IGBT功率模块|络合物桥| 600V的五（巴西）国际消费电子展|7A我（丙）
|
Cooper Bussmann, Inc.
|
| UPA1552H |
MOS FIELD EFFECT POWER TRANSISTOR ARRAY (FAST SWITCHING N-CHANNEL SILICON POWER MOS FET ARRAY)
|
NEC
|
| DDC144NS |
100mA PRE-BIASED TRANSISTOR ARRAY USING DUAL NPN TRANSISTOR
|
DIODES[Diodes Incorporated]
|
| MC3356 MC3346 MC3346D MC3356P |
GENERAL PURPOSE TRANSISTOR ARRAY ONE DIFFERENTIALLY CONNECTED PAIR AND THREE ISOIATED TRANSISTOR ARRAYS
|
MOTOROLA[Motorola, Inc]
|
