| PART |
Description |
Maker |
| SEMIX653GD176HDC |
Trench IGBT Modules 650 A, 1700 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
| IXGR32N170AH1 |
26 A, 1700 V, N-CHANNEL IGBT
|
IXYS CORP
|
| FD600R17KF6CB2 |
975 A, 1700 V, N-CHANNEL IGBT
|
|
| CM1200HA-34H |
1200 A, 1700 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| PPHR70L60A |
Insulated Gate Bipolar Transistor; Package: TO-254; VCE(sat) (V): 1.6; t(on) (nsec): 115; IC (A): 70; PD (W): 300; E(off) (mJ): 15; Rq: 0.4; Qg(on) (nC): 150; t(off) (nsec): 1700; BV(CES) (V): 600; VGE(th) (V): 3 70 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| CM200DX-34SA |
Dual IGBT NX-Series Module 200 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
| CM450DX-34SA |
Dual IGBT NX-Series Module 450 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
| IXGH22N50BS IXGH22N50B |
HiPerFAST IGBT
HiPerFAST IGBT 44 A, 500 V, N-CHANNEL IGBT, TO-247AD
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| ADL5358 ADL5358-EVALZ ADL5358ACPZ-R2 ADL5358ACPZ-R |
500 MHz to 1700 MHz, Dual-Balanced Mixer, LO Buffer, IF Amplifier, and RF Balun
|
Analog Devices
|
| HGTP14N40F3VL HGT1S14N40F3VLS |
14A, 380V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
330mJ, 400V, N-Channel Ignition IGBT
72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN 38 A, 420 V, N-CHANNEL IGBT, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
