PART |
Description |
Maker |
BDW93B BDW93C |
Complemetary Silicon Power Darlington Transistors(互补硅功率达林顿晶体
|
意法半导
|
2SD2098 |
NPN Silicon Epitaxial Planar Tra nsistor
|
SeCoS Halbleitertechnologie GmbH
|
Q67000-A5066 TDA4605-3 TDA46053 |
PWM Control IC for SMPS using MOS-Tra... Control IC for Switched-Mode Power Supplies using MOS-Transistor From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
MJE182 MJE171 MJE181 MJE172 ON2017 MOTOROLAINC-MJE |
POWER TRANSISTORS COMPLEMENTARY SILICON 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-225AA From old datasheet system COMPLEMENTARY SLLLCON PLASTLC POWER TRANSLSTORS 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS
|
MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
|
MJ403203 MJ80203 MJ4035 MJ4032 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SILICON NPN POWER TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS SILICON POWER MOS FET
|
California Eastern Labs
|
NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Receptacle With A Wire Wrap Tail Silicon Power Rectifier Diode / 40 Amp Silicon Power Rectifier Diode 40 Amp NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp 40 A, 300 V, SILICON, RECTIFIER DIODE 40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc. NTE[NTE Electronics]
|
MIG100J7CSB1W |
MINIATURE POWER RELAY 东芝智能功率模块IGBT的硅频道 TOSHIBA Intelligent Power Module Silicon N Channel IGBT Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. 12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4 Silicon Power Rectifier Diode / 12 Amp Silicon Power Rectifier Diode 12 Amp Silicon Power Rectifier Diode, 12 Amp Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
|
NTE[NTE Electronics]
|
2SD2163 |
Silicon power transistor NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING
|
NEC
|