| PART |
Description |
Maker |
| 2SJ77 2SJ78 |
(2SJ76 - 2SJ79) Silicon P-Channel MOS FET
|
Renesas Technology
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| ITH08F06G ITH08F06 ITH08F06B |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-252AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-220AB
HIGH - SPEED POWERLINE N - CHANNEL IGBT
|
MITEL[Mitel Networks Corporation]
|
| DF100R12KF-A FD150R12KF-K |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 100A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 100A一（c）|米：HL093HW048
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 150A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 150A一（c）|米：HL093HW048
|
Atmel, Corp.
Air Cost Control
|
| IRGC5B120UB |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
|
| NE72084 |
TRANSISTOR,MESFET,N-CHAN,5V V(BR)DSS,MICRO-X
From old datasheet system
|
California Eastern Laboratories Inc
|
| OMD38L60ML OMD75N06ML |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 76A I(C) | M:ML111MW084
30V N-Channel PowerTrench MOSFET
|
|
| CT20AS8 |
TRANSISTOR | IGBT | N-CHAN | 450V V(BR)CES | 130A I(C) | TO-252 晶体管| IGBT的|正陈| 450V五（巴西）国际消费电子展| 130A条一（c）|52
|
Mitsubishi Electric, Corp.
|
| F300R06KF |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 300A I(C) | MODULE-S 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 300一（c）|模块
|
Vishay Intertechnology, Inc.
|
| IRGPC50U |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 55A I(C) | TO-247AC 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 55A条一（c）|47AC
|
International Rectifier, Corp.
|
| IRGC49B120UB |
1200 V, N-CHANNEL IGBT
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
|
| FHC40LG |
TRANSISTOR,HEMT,N-CHAN,3.5V V(BR)DSS,10MA I(DSS),SOT-173VAR
From old datasheet system
|
Fujitsu Ltd
|
