PART |
Description |
Maker |
FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system 5.1-5.9 GHz U-NII Power Amplifier The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
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ANADIGICS[ANADIGICS, Inc] Anadigics Inc
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ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存??? High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??) High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五,10纳秒- 2微秒 HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
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International Rectifier, Corp. Semtech Corporation
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FS10SM-16 FS10SM-16A |
Power MOSFETs: FS Series, High Voltage, 800V Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
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2SB1063 B1063 |
High Power Amplifier Complementary Pair with 2SD1499 For High Power Amplification
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PANASONIC[Panasonic Semiconductor]
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MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D- |
Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
|
Cornell Dubilier Electronics, Inc. http:// Cornell Dubilier Electronic... Cornell Dubilier Electr...
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BUX82 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
2SJ114 |
HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER
|
Hitachi Semiconductor
|
HSMS-2700-BLK HSMS-2700-TR2 HSMS-2702-BLK HSMS-270 |
HSMS-270C · High power clipping/clamping diode HSMS-270B · High power clipping/clamping diode HSMS-2702 · High power clipping/clamping diode HSMS-2700 · High power clipping/clamping diode High Performance Schottky Diode for Transient Suppression
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Agilent (Hewlett-Packard) Agilent(Hewlett-Packard)
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APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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