| PART |
Description |
Maker |
| MS2200 |
Bipolar/LDMOS Transistor
RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS
|
Microsemi Corporation
Advanced Power Technology
|
| PH1214-25S |
1200-1400 MHz,25 W, 1 ms pulse,radar pulsed power transistor
Radar Pulsed Power Transistor, 25W, lus Pulse, 10% Duty 1.2-1.4 GHz
|
MA-Com
M/A-COM / Tyco Electronics
|
| PHI214-30EL PH1214-30EL |
Radar Pulsed Power Transistor, 30W, 1.0ms Pulse, 10% Duty 1.2 - 1.4 GHz
High Speed Comparator; Package: PDIP; No of Pins: 16; Temperature Range: 0°C to 70°C
Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty . 1.2 - 1.4 GHz
Radar Pulsed Power Transistor/ 3OW/ 1 .Oms Pulse/ 10% Duty . 1.2 - 1.4 GHz
|
Tyco Electronics
|
| PH2731-75L PI-F2731-75L |
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 7A I(C) | FO-91VAR
Radar Pulsed Power Transistor, 75W, 300ms Pulse, 10% Duty 2.7 - 3.1 GHz
Radar Pulsed Power Transistor, 75W, 300us Pulse, 10% Duty 2.7 - 3.1 GHz
|
Tyco Electronics
|
| 0405SC-1000M MICROSEMIPOWERPRODUCTSGROUP-0405SC-10 |
SiC UHF: 400-450MHz, Class AB, Common Gate-Pulsed; P(out) (W): 1000; P(in) (W): 180; Gain (dB): 8; Vcc (V): 125; Pulse Width (µsec): 300; Duty Cycle (%): 10; Case Style: 55KT FET-1 UHF BAND, Si, N-CHANNEL, RF POWER, JFET
1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT
|
Microsemi, Corp.
Microsemi Corporation
|
| BLF2022-70 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
UHF power LDMOS transistor
|
Philips Semiconductors
NXP Semiconductors
|
| PH2729-5M |
Radar Pulsed Power Transistor 5W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty
Radar Pulsed Power Transistor 5W, 2.7-2.9 GHz, 100楼矛s Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| MS1490 |
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Advanced Power Technology
|
| PH1113-100 |
Radar Pulsed Power Transistor - 100 Watts/ 1.1-1.3 GHz/ 3ms Pulse/ 30% Duty
Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3ms Pulse, 30% Duty 雷达脉冲功率晶体 100瓦，11日至1月三日千兆赫，为3ms脉冲0％的关税
|
MACOM[Tyco Electronics]
|
| PH2931-135S |
Radar Pulsed Power Transistor 135W, 2.9-3.1 GHz, 20μs Pulse, 1% Duty
Radar Pulsed Power Transistor 135W, 2.9-3.1 GHz, 20楼矛s Pulse, 1% Duty
|
M/A-COM Technology Solutions, Inc.
|
| PH2729-110M |
Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty
Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100楼矛s Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
|
