PART |
Description |
Maker |
K8D1716UBB-YI07 K8D1716UBB-YI08 K8D1716UBB-YI09 K8 |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory 1,600位(200万x8/1M x16)的双银行NOR闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
MB84VD23381HJ-70PBS |
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM 64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
|
Spansion Inc. SPANSION LLC
|
MB84VD21181-85-PBS MB84VD21181-85-PTS MB84VD21191- |
16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM Stacked MCP (multi-chip package) flash memory & SRAM 16M(x8/x16) flash memory & 4M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
MX69F1604C3TXBI-90 MX69F1602 MX69F1602C3BXBI-70 MX |
16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY
|
MCNIX[Macronix International]
|
LH28F160BJE-TTL90 |
16M (x8/x16) Flash Memory
|
Sharp Electrionic Components
|
K4X56163PG-FE K4X56163PG-FG |
16M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
IS45S16800E-6BLA1 IS45S81600E-6TLA1 IS45S81600E-7C |
16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
|
Integrated Silicon Solu... Integrated Silicon Solution, Inc
|
MX29F1610A_B 29F1610A |
16M-BIT [2M x8/1M x16] CMOS From old datasheet system
|
Macronix 旺宏
|
K8D1716UTC-TC09 K8D1716UTC-FI09 K8D1716UTC-FI07 K8 |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
MX28F160C3TXAI-90G MX28F160C3B MX28F160C3BTC-11 MX |
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MCNIX[Macronix International]
|
M28F220-90M1TR M28F220-90M6TR -M28F220 STMICROELEC |
256K X 8 FLASH 12V PROM, 90 ns, PDSO44 2Mbit (256Kb x8 or 128Kb x16, Boot Block) Flash Memory(2Mb???瀛???ī 256K X 8 FLASH 12V PROM, 70 ns, PDSO44
|
STMICROELECTRONICS
|
MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的(x 8/x16)闪 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73 Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes CONN, M HEADER ST 1X2 .230 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
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FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|