PART |
Description |
Maker |
1N1206RA 1N1202A 1N1202RA JAN1N1202A 1N1204RA 1N36 |
12A silicon power rectifier, 200V 12A silicon power rectifier, 1000V Military Silicon Power Rectifier 12A silicon power rectifier, 400V 12A silicon power rectifier, 600V 12A silicon power rectifier, 800V
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MICROSEMI[Microsemi Corporation] http://
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PBY277 1N1199A 1N1200A 1N1202A 1N1204A 1N1206A 1N3 |
Silicon-Power Rectifiers Silicon-Power Rectifiers 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4 Silicon-Power Rectifiers 12 A, 800 V, SILICON, RECTIFIER DIODE, DO-4 Replacement with:PBY272R
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Diotec Semiconductor AG DIOTEC[Diotec Semiconductor] Diotec Elektronische
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BD438 ON0195 BD442 BD440 |
RH Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 05V; Power: 1W; Safety standards and approval: EN POWER TRANSISTORS PNP SILICON From old datasheet system 4.0 AMPERES POWER TRANSISTORS Plastic Medium Power Silicon PNP Transistor
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Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola, Inc]
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BD237 ON0191 |
From old datasheet system POWER TRANSISTORS NPN SILICON Plastic Medium Power Silicon NPN Transistor CASE 77-09 TO-225AA TYPE
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Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Receptacle With A Wire Wrap Tail Silicon Power Rectifier Diode / 40 Amp Silicon Power Rectifier Diode 40 Amp NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp 40 A, 300 V, SILICON, RECTIFIER DIODE 40 A, 200 V, SILICON, RECTIFIER DIODE
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NTE Electronics, Inc. NTE[NTE Electronics]
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HAT2054M HAT2053M |
Silicon N Channel Power MOSFET Power Switching Silicon N Channel Power MOS FET Power Switching
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HITACHI[Hitachi Semiconductor]
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M68732HA 68732HA |
SILICON MOS FET POWER AMPLIFIER, 440-490MHz, 7W, FM PORTABLE 硅场效应晶体管功率放大器40 - 490MHz的,7瓦,调频便携 From old datasheet system Silicon MOS FET Power Amplifier, 440-490MHz, 7W FM PORTABLE RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 440-490 MHz 7W FM PORTABLE
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Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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2SB1432 |
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING Silicon power transistor
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NEC
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2N6388 2N6387 |
DARLINGTON NPN SILICON POWER TRANSISTORS Plastic Medium-Power Silicon Transistors
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ONSEMI[ON Semiconductor]
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MAX7384B MAX7384CRVT MAX7384CRVB MAX7384CMUK MAX73 |
11.0592 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output 12 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output Replaced by SN54197 : 50/30/100-Mhz Presettable Decade OR Binary Counters/Latches 14-CDIP -55 to 125 硅振荡器的低功耗高频开关和复位输出 14.7456 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output 10 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output
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Maxim Integrated Products, Inc. MAXIM - Dallas Semiconductor
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