| PART |
Description |
Maker |
| GI910 GI911 GI912 GI914 GI916 GI917 |
MEDIUM-SWITCHING PLASTIC RECTIFIER
|
GE Security, Inc.
General Semiconductor
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| QM30E3Y-2H QM30E2Y-2H QM30E2Y |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
MEDIUM POWER SWITCHING USE INSULATED TYPE 中功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| 2N6387-D |
Plastic Medium-Power Silicon Transistors
|
ON Semiconductor
|
| BD234 BD237 BD234G BD237G BD238 |
Plastic Medium Power Bipolar Transistors
|
ON Semiconductor
|
| BD676-D |
Plastic Medium-Power Silicon PNP Darlingtons
|
ON Semiconductor
|
| MJE344-D |
Plastic NPN Silicon Medium-Power Transistor
|
ON Semiconductor
|
| BD166 |
Plastic Medium Power Silicon PNP Transistor
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| 2N4920G 2N4918 2N4918_04 2N4919 2N4920 |
Medium-Power Plastic PNP Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
| BD439G BD435G |
Plastic Medium Power Silicon NPN Transistor
|
Rectron Semiconductor
|
