| PART |
Description |
Maker |
| VSC3040 |
11 Gbps 144 × 144 Asynchronous Crosspoint Switch
11 Gbps 144 】 144 Asynchronous Crosspoint Switch
|
Vitesse Semiconductor Corporation
|
| ADN3000-06 |
6.144 Gbps Transimpedance Amplifier with Integrated Photodiode
|
Analog Devices
|
| SPS-4310RW-CXX0G |
6.144 Gbps / CWDM / 10 km Digital DiagnosticMulti-Rate CPRI SM SFP
|
Optoway Technology Inc
|
| AK632256AWG-12 |
262,144 x 32 Bit CMOS/BiCMOS Static Random Access Memory 262,144 × 32位的CMOS / BiCMOS工艺静态随机存取存储器
|
Accutek Microcircuit, Corp.
|
| SPS-4340RW-CXX0G SPS-4340RW-15 |
6.144 Gbps / CWDM / 40 km Digital Diagnostic Multi-Rate CPRI SMSFP
|
Optoway Technology Inc
|
| SPB-4920BRLWG SPB-4920RLWG SPB-4920ARLWG |
6.144 Gbps / 1330 nm TX / 1270 nm RX / 20 km Digital DiagnosticMulti-Rate CPRI SMSFP
|
Optoway Technology Inc
|
| SPB-4840RLWG SPB-4840ARLWG SPB-4840BRLWG |
6.144 Gbps / 1270 nm TX / 1330 nm RX / 40 km Digital DiagnosticMulti-Rate CPRI SMSFP
|
Optoway Technology Inc
|
| SPS-4102RWG SPS-4102ARWG SPS-4102BRWG |
6.144 Gbps / 1310 nm / 2 km Digital Diagnostic Multi-Rate CPRI SM SFP
|
Optoway Technology Inc
|
| HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260C |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY
60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
HITACHI[Hitachi Semiconductor]
|
| K4D263238G-GC360 K4D263238G-GC33 K4D263238G-GC2A0 |
4M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
4M X 32 DDR DRAM, 0.55 ns, PBGA144 FBGA-144
4M X 32 DDR DRAM, 0.55 ns, PBGA144 LEAD FREE, FBGA-144
|
Sensitron Semiconductor
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MT49H8M32BM-4 MT49H8M32FM-4 |
8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, LEAD FREE, MICRO, BGA-144
8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, MICRO, BGA-144
|
NEC, Corp.
|
