PART |
Description |
Maker |
2SD1664 2SD1858 A5800362 2SD1664P 2SD1664T100Q 2SD |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis Medium Power Transistor (32V/ 1A) Medium Power Transistor (32V, 1A) From old datasheet system Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
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Littelfuse Rohm CO.,LTD. ROHM[Rohm]
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SBM52414X SBM52414Z SBM51414G SBM51414N SBM51414Z |
Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving 中功率比迪光学标准模310纳米发光550纳米接收 Transceiver Components and FTTx solutions - Tx 1310nm/Rx 1550nm, Medium Power
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INFINEON[Infineon Technologies AG]
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INA-34063 |
3.0 GHz Medium Power Silicon RFIC Amplifier(3.0 GHz中等功率硅射频集成电路放大器) 3V Fixed Gain. Medium Power Amplifier 3.0 GHz的中功率硅射频放大器.0千兆赫中等功率硅射频集成电路放大器)
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Agilent(Hewlett-Packard)
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MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
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Agilent Technologies, Inc. Agilent (Hewlett-Packard)
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SF25JZ51 SF25GZ51 F25JZ51 |
SF25JZ51 THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS MEDIUM POWER CONTROL APPLICATIONS 中功率控制中的应
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TOSHIBA[Toshiba Semiconductor]
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2SB1182 2SB1188 2SB822 2SB911M 2SB1240 A5800350 2S |
From old datasheet system Medium power Transistor(-32V/ -2A) Medium power Transistor(-32V, -2A) 中等功率晶体管(- 32V的,- 2A型)
|
Rohm Co., Ltd.
|
2SD2143 2SD1866 2SD2397 |
Medium Power Transistor(Motor, Relay drive) (600V, 2A) 中等功率晶体管(电机,继电器驱动器)600V2A号) Medium Power Transistor(Motor/ Relay drive) (6010V/ 2A) Medium Power Transistor(Motor, Relay drive) (60?0V, 2A) Medium Power Transistor(Motor, Relay drive) (6010V, 2A)
|
Rohm Co., Ltd.
|
CR12CM-12A CR12CM-12A-A8 CR12CM-12A-13 CR12CM-12A- |
Thyristor Medium Power Use 600V - 12A - Thyristor Medium Power Use
|
Renesas Electronics Corporation
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HMC441 HMC440QS16G HMC441LM1 |
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER/ 7.0 - 15.5 GHz HBT DIGITAL PHASE-FREQUENCY DETECTOR/ 10 - 1300 MHz/ w/ INTEGRATED 5-BIT COUNTER/ 10 - 2800 MHz 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz
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美国讯泰微波有限公司上海代表 HITTITE[Hittite Microwave Corporation]
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CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y 25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O 25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体 25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
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Continental Device India, Ltd. CDIL[Continental Device India Limited] Continental Device Indi...
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2SC4684 E000977 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) From old datasheet system STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
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Toshiba Semiconductor
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