| PART |
Description |
Maker |
| OM9403SD |
25V 8A Single Channel Hi-Rel IGBT Gate Driver in a DP-10A package
IGBT GATE DRIVER For Driving IGBT Modules 600V and 1200V, 150A to 600A
|
IRF[International Rectifier]
|
| CM75DU-12F |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM150DY-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM150DU-12F |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM300HA-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM150DU-12H |
IGBT Modules: 600V
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM15TF-12H |
IGBT Modules: 600V
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM200DU-12H |
HIGH POWER SWITCHING USE INSULATED TYPE
IGBT Modules: 600V
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CM75DY-12H |
IGBT Modules: 600V
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| CM200E3U-12H |
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
IGBT Modules: 600V
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
