| PART |
Description |
Maker |
| MT46V32M16P-5BLF MT46V32M16P-5BFTR MT46V32M16P-5BL |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
64M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
512Mb: x4, x8, x16 DDR SDRAM Features
128M X 4 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
| NT5DS32M16BS-5TI NT5DS32M16BS-6KI NT5DS64M8BS-5TI |
DDR DRAM, PDSO66 0.400 INCH, TSSOP2-66
|
Nanya Technology, Corp.
NANYA TECHNOLOGY CORP
|
| K4D261638I-TC400 K4D261638I-LC400 K4D261638I-LC500 |
8M X 16 DDR DRAM, 0.6 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
8M X 16 DDR DRAM, 0.6 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
8M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
|
Data Device, Corp.
|
| HY5DU121622BT-D4 HY5DU12822BT HY5DU12822BTP-H HY5D |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM - 512Mb
64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| K4H560838H-UC/LCC K4H561638H-UC/LCC K4H560438H-UC/ |
32M X 8 DDR DRAM, 0.7 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
32M X 8 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
64M X 4 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
256Mb H-die DDR SDRAM Specification
|
Atmel, Corp.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS43R16320D-5TL IS43R32160D-5BL IS46R16320D-6TLA1 |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
16M X 32 DDR DRAM, 0.7 ns, PBGA144
|
INTEGRATED SILICON SOLUTION INC
|
| W942508CH-75 |
8M x 4 BANKS x 8 BIT DDR SDRAM 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Winbond Electronics, Corp.
|
| EDD5108ADTA-6BLI EDD5116ADTA-6BLI EDD5116ADTA-7ALI |
32M X 16 DDR DRAM, 0.75 ns, PDSO66
512M bits DDR SDRAM WTR (Wide Temperature Range)
|
ELPIDA MEMORY INC
|
| HY5DU281622ETP HY5DU28822ETP HY5DU28422ETP HY5DU28 |
8M X 16 DDR DRAM, 0.75 ns, PDSO66
128Mb DDR SDRAM
|
HYNIX SEMICONDUCTOR INC
|
| HY5DU561622ELTP-JI |
16M X 16 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| HY5DU56422BT-D43 |
64M X 4 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
|
