PART |
Description |
Maker |
SLOTTEN-4-17 SLOTTEN-2-17 SLOTTEN-3-17 SLOTTEN-5-1 |
SHIELDED, 288 uH - 432 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 286 uH - 630 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 230 uH - 310 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 72 uH - 163 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 303 uH - 765 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 66 uH - 136 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 67.2 uH - 100.2 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 52.7 uH - 71.3 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 67.2 uH - 100.8 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 280 uH - 432 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 1.76 uH - 2.64 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 1.2 uH - 1.8 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 2.4 uH - 5.4 uH, VARIABLE INDUCTOR DIP-5 UNSHIELDED, 1.25 uH - 2.75 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 2.9 uH - 3.9 uH, VARIABLE INDUCTOR DIP-5 SHIELDED, 18.7 uH - 25.3 uH, VARIABLE INDUCTOR DIP-5
|
Coilcraft, Inc.
|
1N5456A 1N5440 1N5454A 1N5451A 1N5452A 1N5453A |
Diode VAR Cap Single 30V 100pF 2-Pin DO-7 Diode VAR Cap Single 30V 4.7pF 2-Pin DO-7 Diode VAR Cap Single 30V 68pF 2-Pin DO-7 Diode VAR Cap Single 30V 39pF 2-Pin DO-7 Diode VAR Cap Single 30V 47pF 2-Pin DO-7 Diode VAR Cap Single 30V 56pF 2-Pin DO-7
|
New Jersey Semiconductor
|
OV5116P |
B/W | PAL | 352 x 288 | ANALOG | CameraChip /黑白| PAL制式| 352 × 288 |模拟|的CameraChip
|
EPCOS AG
|
MT90870 MT90870AG |
12,288 x 12,288 Channels Flexible 12 k Digital Switch (F12kDX) with up to 48 Input and 48 Output Streams and Data Rates from 2 to 32 Mbps Flexible 12K digital switch (F12kDX).
|
Zarlink Semiconductor
|
XC95288XL-10FGG256C XC95288XL-10FGG256I XC95288XL- |
3.3V 288-mc CPLD FLASH PLD, 10 ns, PBGA256 3.3V 288-mc CPLD FLASH PLD, 6 ns, PBGA256 3.3V 288-mc CPLD FLASH PLD, 7.5 ns, PQFP144 6 ns pin-to-pin logic delays
|
Xilinx, Inc. XILINX INC
|
HX430C16PBK2-32 |
DDR4-288- DDR4 3000 CL16 288 Pin DIMM
|
List of Unclassifed Man...
|
2741T 2741S |
T1/E1 Transformer Shielded HIGH FREQUENCY MAGNETICS T1/E1 Through Hole Shielded Transformers
|
BEL[Bel Fuse Inc.]
|
558-1192 558-1192-09-00-00 558-1192-11-00-00 558-1 |
Variable Coil, Shielded, Vertical, .080μH thru 1.20mΗ SHIELDED, 1.8 uH - 2.7 uH, VARIABLE INDUCTOR SHIELDED, 3.9 uH - 5.6 uH, VARIABLE INDUCTOR SHIELDED, 0.39 uH - 0.56 uH, VARIABLE INDUCTOR
|
CAMBION Electronic Components WEARNES CAMBION LTD
|
558-7106 558-7106-16-00-00 558-7106-11-00-00 |
Variable Coil, Shielded, Vertical, .09μH thru 12.0mΗ SHIELDED, 8 uH - 12 uH, VARIABLE INDUCTOR SHIELDED, 1.2 uH - 1.8 uH, VARIABLE INDUCTOR
|
CAMBION Electronic Components WEARNES CAMBION LTD
|
TC55V4000ST-70 TC55V4000ST-85 |
524,288-WORD BY 8-BIT FULL CMOS STATIC RAM 524,288-WORD BY 8-BIT STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
MH32S64APHB-8 MH32S64APHB-7 MH32S64APHB-6 |
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM 2147483648位(33554432 -文字4位)同步DRAM 2 /147 /483 /648-BIT (33 /554 /432 - WORD BY 64-BIT)Synchronous DRAM
|
Mitsubishi Electric, Corp.
|
|