| PART |
Description |
Maker |
| MX23C1010 MX23C1010MC-10 MX23C1010MC-12 MX23C1010M |
1M-BITMASKROM(8BITOUTPUT)
From old datasheet system
1M-BIT MASK ROM(8 BIT OUTPUT)
MINIATURE GENERAL PURPOSE RELAY 128K X 8 MASK PROM, 45 ns, PDIP32
1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 90 ns, PDIP32
1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 100 ns, PQCC32
1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 150 ns, PQCC32
1M-BIT MASK ROM (8 BIT OUTPUT) 100万位掩码光盘位输出）
1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 120 ns, PDIP32
1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 70 ns, PDSO32
1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 120 ns, PQCC32
1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 100 ns, PDSO32
|
MCNIX[Macronix International]
Macronix 旺宏
Macronix International Co., Ltd.
Altera, Corp.
|
| HT23C040 23C040 |
CMOS 512Kx8-Bit Mask ROM
From old datasheet system
CMOS 512K8-Bit Mask ROM
|
HOLTEK[Holtek Semiconductor Inc]
|
| TC55W800XB8 TC55W800XB7 |
524,288-WORD BY 16-BIT FULL CMOS STATIC RAM
|
http://
TOSHIBA[Toshiba Semiconductor]
|
| M5M29FB800VP-10 M5M29FT800VP-10 M5M29FT800VP-12 M5 |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 8,388,608位（1048,576 - Word 524,288字BY16位）的CMOS 3.3只，块擦除闪
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| AK536512Z |
524,288 Word by 36 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK632512AW AK632512AW-15 |
524,288 x 32 Bit CMOS / BiCMOS Static Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK632512W-15 AK632512Z-20 |
524,288 x 32 Bit CMOS / BiCMOS Static Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| M5M29FB800RV-80 M5M29FT800RV-80 M5M29FB800FP M5M29 |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
From old datasheet system
8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| FM27C512 FM27C512V FM27C512_01 FM27C512Q FM27C512Q |
524,288-Bit (64K x 8) High Performance CMOS EPROM
524288-Bit (64Kx 8) High Performance CMOS EPROM(95.70 k)
524,288-Bit (64K x 8)High Performance CMOS EPROM
|
ETC[ETC]
Fairchild Semiconductor
|
| NM27C512 NM27C512Q NM27C512QE120 NM27C512V NM27C51 |
524,288-Bit (64K x 8) High Performance CMOS EPROM
524 /288-Bit (64K x 8) High Performance CMOS EPROM
|
FAIRCHILD[Fairchild Semiconductor]
|
