PART |
Description |
Maker |
CE2766 |
6-Channe Audio DAC
|
CEI
|
IRFP040 IRF9622 IRF9612 IRFP362 IRFP343 |
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 8.4A I(D) | TO-247AC TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 1.5A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 200伏五(巴西)直| 1.5AI(四)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 20A I(D) | TO-247 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 900MA I(D) | TO-220AB TRANSISTOR|MOSFET|P-CHANNEL|200VV(BR)DSS|1.5AI(D)|TO-220AB
TRANSISTOR|MOSFET|N-CHANNEL|50VV(BR)DSS|40AI(D)|TO-247AC
|
International Rectifier, Corp.
|
IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 8A条(丁)|05AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 4.9AI(四)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 1A条(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 28A条(丁)|04AE TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五(巴西)直| 600毫安(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五(巴西)直|5A条(丁)|04AE
|
Black Box, Corp. Bourns, Inc. Vishay Intertechnology, Inc. Samsung Semiconductor Co., Ltd. 3M Company
|
2SK956 2SK1010 2SK1507-01 2SK958 2SK1547-01 2SK138 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-247 晶体管| MOSFET的| N沟道| 800V的五(巴西)直| 4A条(丁)|47 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 6A条(丁)|20 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-247 MOSFET transistors TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset From old datasheet system TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,9A I(D),TO-220 TRANSISTOR|MOSFET|N-CHANNEL|500VV(BR)DSS|6AI(D)|TO-220
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,9A I(D),TO-247
|
Toshiba, Corp. Mallory Sonalert Products, Inc. Fuji Semiconductors, Inc.
|
STB7NA40 4234 STB7NA40-1 STB7NA40T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.5A I(D) | TO-263AB TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.5A I(D) | TO-262VAR N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
|
STMicroelectronics
|
NDT014 NDT014J23Z |
N-Channel Enhancement Mode Field Effect Transistor.7A0V.2ΩN沟道增强型场效应管(漏电.7A, 漏源电压60V,导通电.2Ω 2.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation
|
DUI230S DU1230S |
RF MOSFET Power Transistor, 30W, 12V, 2 - 175 MHz RF MOSFET Power Transistor锛?30 W锛?12V锛?2 -175 MHz RF MOSFET Power Transistor, 3OW, 12V 2 - 175 MHz 射频MOSFET功率晶体管,3OW2V - 175兆赫 RF MOSFET Power Transistor30 W12V2 -175 MHz 射频MOSFET功率晶体管,30瓦,12V的,2 -175兆赫 RF MOSFET Power Transistor/ 3OW/ 12V 2 - 175 MHz
|
Hubbell Wiring Device-Kellems TE Connectivity, Ltd. Tyco Electronics
|
OM6414SP3 OM6415SP3 OM6413SP3 OM6416SP3 |
TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 200V V(BR)DSS | 4A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 200伏五(巴西)直| 4A条(丁) TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 400V V(BR)DSS | 2.5A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 400V五(巴西)直| 2.5AI(四 TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 100V V(BR)DSS | 6A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 100V的五(巴西)直| 6A条(丁) TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 500V V(BR)DSS | 2A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 500V五(巴西)直|甲(丁)
|
Samwha Electronics International Rectifier, Corp.
|
2SK956-01 2SK1507-01MR |
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,9A I(D),TO-247 TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,9A I(D),TO-220 From old datasheet system
|
Fuji Semiconductors, Inc.
|
IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞???? HEXFET Power MOSFET HEXFET? Power MOSFET 11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier] VISHAY SILICONIX
|
2N4118A SST4119 2N4117A 2N4119A PN4117A PN4118A PN |
N-Channel JFETs IC FTDI2232L USB/SERIAL 48-LQFP MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:12V; Case style:SO-8; Current, Id cont:4.8A; Current, Idm pulse:-20A; Power, Pd:1.1W; Resistance, Rds on:0.035R; SMD:1; MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:3.6A; Current, Idm pulse:40A; Power, Pd:1.1W; Resistance, Rds on:0.06R; SMD:1;
|
VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
|