| PART |
Description |
Maker |
| EDE2516AASE-AE-E EDE2516AASE-DF-E |
16M X 16 DDR DRAM, 0.5 ns, PBGA84
16M X 16 DDR DRAM, 0.45 ns, PBGA84
|
ELPIDA MEMORY INC
|
| MD16R1624DF0-CM8 MD18R1628DF0-CM8 MD16R162GDF0-CM8 |
32M X 32 RAMBUS MODULE, DMA232
64M X 36 RAMBUS MODULE, DMA232
128M X 32 RAMBUS MODULE, DMA232
|
|
| HY5PS121621AF HY5PS121621AF-C3 HY5PS121621AF-C4 HY |
512Mb DDR2 SDRAM
32M X 16 DDR DRAM, PBGA84 ROHS COMPLIANT, FBGA-84
32M X 16 DDR DRAM, PBGA84 FBGA-84
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| S29PL127N65GAWW02 S29PL127N65GAW003 S29PL127N65GAI |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 65 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 256/128/128字节6/8/8 M中的x 16位）.0伏的CMOS只同步读/写，页模式闪
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 70 ns, PBGA84
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
|
Spansion, Inc.
Spansion Inc.
SPANSION LLC
|
| KMM366F1600BK2 KMM366F1680BK2 |
16M x 64 DRAM DIMM(16M x 64 动RAM模块)
16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MC-4R256CEE6C-845 MC-4R256CEE6B MC-4R256CEE6B-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184
|
http://
NEC[NEC]
NEC Corp.
|
| IBM13M16734BCD |
16M x 72 1 Bank Registered/Buffered SDRAM Module(16M x 72 1组寄缓冲同步动态RAM模块)
|
IBM Microeletronics
|
| TC58NS128ADC |
128-MBIT (16M x 8 BITS) CMOS NAND E PROM (16M BYTE SmartMedia )
|
TOSHIBA
|
| TH58V128DC |
128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia)
|
Toshiba Semiconductor
|
| MC-4R64FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 32M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA160
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| TC58FVB160-12 TC58FVB160-85 |
16M Bit (1M×16Bits ) CMOS NAND EEPROM(16M CMOS与非EEPROM) 1,600位（100万16位）的CMOS闪存EEPROM的（1,600 EEPROM中的CMOS与非
|
Toshiba Corporation
Toshiba, Corp.
|
