PART |
Description |
Maker |
TC58256DC TC58256FT |
256M Bit (32M×8Bits ) CMOS NAND EEPROM(32M×8位与非EEPROM) 256M比特2M的8位)的CMOS闪存EEPROM的(32M的8位与非的EEPROM
|
Toshiba Corporation Toshiba, Corp.
|
IC-MNEVALMN1D IC-MNQFN48 |
25-BIT NONIUS ENCODER WITH 3-CH. SAMPLING 13-BIT Sin/D INTERPOLATION
|
IC-Haus GmbH http://
|
IC-NQI |
13-bit Sin/D CONVERTER WITH CALIBRATION
|
IC-Haus GmbH
|
IC-NQ IC-NQEVALNQ1D IC-NQTSSOP20 IC-NQTSSOP20ET-40 |
13-bit Sin/D CONVERTER WITH CALIBRATION
|
IC-Haus GmbH
|
IC-MGEVALMG1D IC-MGTSSOP20 |
8-Bit Sin/Cos INTERPOLATION IC WITH RS422 DRIVER
|
IC-Haus GmbH
|
IC-TW2EVALTW22D IC-TW2QFN24 |
8-BIT SIN/COS INTERPOLATION IC WITH INTEGRATED EEPROM 8-BIT SIN/COS INTERPOLATION IC WITH INTEGRATED EEPROM
|
IC-Haus GmbH
|
KM23C32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM23V32005BTY KM23V32005BETY |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
MBM29DL321BD-80 MBM29DL322BD-80 MBM29DL323BD-80 MB |
OFFICE 802.3 TRANS CBL 1M 4M X 8 FLASH 3V PROM, 80 ns, PBGA57 TVS BIDIRECT 600W 33V SMB 32M的(4米8/2M × 16)位双操 32M (4M X 8/2M X 16) BIT Dual Operation 4M X 8 FLASH 3V PROM, 80 ns, PBGA57 32M (4M X 8/2M X 16) BIT Dual Operation 4M X 8 FLASH 3V PROM, 80 ns, PDSO48
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
W25Q80 W25Q16 W25Q32 |
8M-BIT, 16M-BIT AND 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
|
Winbond
|