| PART |
Description |
Maker |
| CY7C1387F-167BGC CY7C1387F-167BGI CY7C1387F-167BGX |
Replacement for Intersil part number 8100604EA. Buy from authorized manufacturer Rochester Electronics.
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 18兆位（为512k × 36 / 1兆位× 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor Corp.
|
| CY7C1386DV25-250BZXI CY7C1386DV25-250BZI CY7C1386D |
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3.4 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 18兆位（为512k × 36/1M × 18）流水线双氰胺同步静态存储器
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3.4 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS8322V18GB-166I GS8322V18GB-225 GS8322V18GE-225I |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 7 ns, PBGA119
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 7 ns, PBGA165
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 7 ns, PBGA119
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 512K X 72 CACHE SRAM, 8 ns, PBGA209
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 8.5 ns, PBGA119
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 512K X 72 CACHE SRAM, 8.5 ns, PBGA209
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 512K X 72 CACHE SRAM, 7.5 ns, PBGA209
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 8.5 ns, PBGA165
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 8 ns, PBGA165
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 6.5 ns, PBGA119
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 7 ns, PBGA165
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 8 ns, PBGA119
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 8.5 ns, PBGA165
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 8 ns, PBGA119
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 8.5 ns, PBGA119
|
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
|
| ICY7C1387C-167BGI CY7C1386C CY7C1386C-167AC CY7C13 |
18-Mb (512K x 36/1M x 18) Pipelined DCD Sync SRAM
|
CYPRESS[Cypress Semiconductor]
|
| GS8322V18B-250 GS8322V18B-250I GS8322V18B-225 GS83 |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8322V72C-200I |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
|
GSI Technology
|
| MT58L1MV18D |
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM 8MB的：12k × 1856 × 32/36 3.3V的I / O的流水线，双氰胺SYNCBURST的SRAM
|
Micron Technology, Inc.
|
| CY7C1386D-200AXI CY7C1387F-167BGC CY7C1387F-167BGI |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
| GS88236BD-333I GS88218 GS88218BB-150 GS88218BB-150 |
9Mb Burst SRAMs
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40
IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR
4M (512K X 8) BIT
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC |
Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
512K X 16 FLASH 3V PROM, 90 ns, PDSO48
512K X 16 FLASH 3V PROM, 70 ns, PBGA48
512K X 16 FLASH 3V PROM, 90 ns, PBGA48
512K X 16 FLASH 3V PROM, 120 ns, PDSO48
512K X 16 FLASH 3V PROM, 120 ns, PDSO44
512K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Spansion, Inc.
SPANSION LLC
|
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