| PART |
Description |
Maker |
| CJP04N20 |
Power Filed Effect Transistor
|
Jiangsu Changjiang Electronics Technology Co., Ltd
JIANGSU[Jiangsu Changjiang Electronics]
|
| CJP16N25 |
Power Filed Effect Transistor
|
Jiangsu Changjiang Electronics Technology
|
| MTM8N35 MTM8N40 MTH8N40 MTH8N35 |
(MTH8N35 / MTH8N40) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
Motorola Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTA1N60E |
FULLY ISOLATED TMOS E-FET POWER FIELD EFFECT TRANSISTOR
Fully Isolated TMOS E-FET / Power Rifld Effect Transistor
|
MOTOROLA[Motorola, Inc]
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| MRF137 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
From old datasheet system
RF POWER FIELD-EFFECT TRANSISTOR
|
ADVANCED SEMICONDUCTOR INC
|
| MTW10N40E |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Motorola Mobility Holdings, Inc.
|
| MRF9210 MRF9210R3 |
MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET
RF Power Field Effect Transistor
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTM20P10 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| MTM20P10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA INC
Motorola, Inc
|
| MRF18090A MRF18090AR3 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
