| PART |
Description |
Maker |
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| GS820E32AGT-133 |
64K x 32 2Mb Synchronous Burst SRAM 64K X 32 CACHE SRAM, 10 ns, PQFP100
|
GSI Technology, Inc.
|
| GS82032AT-166 GS82032AT-166I GS82032AT-133 GS82032 |
ER 4C 4#16 SKT RECP WALL
64K x 32 / 2M Synchronous Burst SRAM
ER 5C 5#16 PIN RECP WALL
ER 5C 5#16 SKT RECP WALL
AM29BL400B/800B
64K x 32 2M Synchronous Burst SRAM
PROGRAMMER, UNIVERSAL;
|
GSI Technology
Electronic Theatre Controls, Inc.
|
| GVT7164D36 7164D36S |
64K X 36 SYNCHRONOUS BURST SRAM
From old datasheet system
|
Galvantech
|
| UT6164C64AQ-5 UT6164C64AQ-6 UT6164C64AT-6 UT6164C6 |
64K X 64 SYNCHRONOUS PIPELINED BURST CMOS SRAM
|
UTRON Technology
ETC[ETC]
|
| AS7C3364PFS32A-133TQC AS7C3364PFS32A-133TQI |
3V 64K x 8/512K x 32 pipeline burst synchronous SRAM, 133MHz
|
Alliance Semiconductor
|
| UPD4265800LE-A80 UPD4264800LE-A80 UPD4265800LE-A70 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
64K x 16 Static RAM
1K x 8 Dual-Port Static RAM
1-Mbit (64K x 16) Static RAM x8快速页面模式的DRAM
|
STMicroelectronics N.V.
|
| K7B203625A |
64K x 36-Bit Synchronous Burst SRAM Rev. 3.0 (Dec. 1999)
|
Samsung Electronic
|
| MCM67B618B MCM67B618BFN9 |
MCM67B618B 64K X 18 Bit BurstRAM Synchronous Fast Static RAM
64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write
From old datasheet system
|
Motorola, Inc
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
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