PART |
Description |
Maker |
GS8170LW36C-250 GS8170LW72C-200 GS8170LW72C-300 GS |
Low-Noise Operational Amplifier 8-SOIC -40 to 85 18Mb sigma 1x1Lp CMOS I/O Late Write SigmaRAM Low-Noise Operational Amplifier 8-PDIP -40 to 85 35.7西格x1Lp的CMOS的I / O后写入SigmaRAM Low-Noise Operational Amplifier 8-SO -40 to 85 35.7西格x1Lp的CMOS的I / O后写入SigmaRAM
|
Electronic Theatre Controls, Inc.
|
EL5134 EL5135 EL5235IS-T7 EL5235IS-T13 EL5235IS EL |
Single, 630MHz Low Noise Amplifier with Enable Dual, 630MHz, Low Noise Amplifier with Enable From old datasheet system 630MHz Gain of 5 Low Noise Amplifiers 630MHz, Gain of 5, Low Noise Amplifiers
|
INTERSIL[Intersil Corporation]
|
EL2126CS-T EL2126CW-T EL2126CW-T7A EL2126CW-T7 EL2 |
Ultra-Low Noise/ Low Power/ Wideband Amplifier Op Amp, 100MHz Wideband, Ultra Low Noise 1.3nV/√Hz, Low Power, 2.5-15VDC Ultra-Low Noise Low Power Wideband Amplifier
|
INTERSIL[Intersil Corporation]
|
EL2125 EL2125CS-T13 EL2125CS-T7 EL2125CW-T7 EL2125 |
Ultra-Low Noise, Low Power, Wideband Amplifier Op Amp, 175MHz Wideband, Ultra Low Noise 0.83nV/√Hz, Low Power, 2.5-15VDC Ultra-Low Noise/ Low Power/ Wideband Amplifier
|
Intersil Corporation
|
K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90 2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125 Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
HS9-OP470ARH-Q HS-OP470AR HS-OP470ARH 5962R9853301 |
16 AMP SPDT MINIATURE POWER RELAY Radiation Hardened, Very Low Noise
Quad Operational Amplifier(抗辐射低噪声四路运算放大 Radiation Hardened, Very Low Noise Quad Operational Amplifier Radiation Hardened/ Very Low Noise Quad Operational Amplifier
|
Intersil Corporation
|
OP-470GP OP-470GS OP-470ATC_883 OP-470 OP-470ARC_8 |
VERY LOW NOISE QUAD OPERATIONAL AMPLIFIER 极低噪声四运算放大器 VERY LOW NOISE QUAD OPERATIONAL AMPLIFIER QUAD OP-AMP, 600 uV OFFSET-MAX, 6 MHz BAND WIDTH, CQCC28
|
Analog Devices, Inc. AD[Analog Devices]
|
AD605-EB AD605ACHIPS AD605AR-REEL AD605AR-REEL7 AD |
Accurate, Low Noise, Dual Channel Linear-In-dB Variable Gain Amplifier, Optimized For Any Application Requiring High Performance Dual, Low Noise, Single-Supply Variable Gain Amplifier
|
http:// Analog Devices, Inc. ANALOG DEVICES INC
|
MAAM12021 MAAM12021RTR MAAM12021SMB MAAM12021TR |
1.5-1.6 GHz, low noise amplifier Low Noise Amplifier 1.5 - 1.6 GHz GT 35C 7#12,28#16 SKT RECP
|
MA-Com MACOM[Tyco Electronics]
|
K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90 Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA 2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
ATR0610-PQQ ATR0610 |
2.7 V GPS LOW NOISE AMPLIFIER RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Atmel Corp. ATMEL[ATMEL Corporation]
|
2N3799X |
PNP,Low Noise Amplifier Transistor(低噪声、放大器型PNP晶体 PNP LOW NOISE AMPLIFIER TRANSISTOR PNP, LOW NOISE AMPLIFIER TRANSISTOR
|
TT electronics Semelab Limited Semelab(Magnatec) SEME-LAB[Seme LAB]
|