| PART |
Description |
Maker |
| BC184 BC184C BC184B |
0.350W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 100 - hFE
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
|
CDIL[Continental Device India Limited]
|
| 2SD596 |
0.7A , 30V NPN Plastic Encapsulated Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| BC413B BC413C BC414B BC414C |
0.350W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.010A Ic, 180 - 460 hFE
0.350W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 100 - hFE
0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 100 - hFE
0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 380 - 800 hFE
|
Continental Device India Limited
|
| 2N3707 |
0.360W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.200A Ic, 100 - 400 hFE
|
Continental Device India Limited
|
| 2DD2679 2DD2679-13 2DD2679-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC PACKAGE-3
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
|
Diodes, Inc.
Diodes Incorporated
|
| CIL928AO CIL928AY |
0.700W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 1.500A Ic, 100 - 200 hFE
0.700W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 1.500A Ic, 160 - 320 hFE
|
Continental Device India Limited
|
| CD9014C CD9014D CD9014D1 CD9014D3 CD9014E CD9014D2 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 200 - 600 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 100 - 300 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 150 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 1000 hFE
NPN SILICON PLANAR TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| CN453 CN452 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
0.900W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40 - 150 hFE
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 40 - 200 hFE
|
Continental Device Indi...
CDIL[Continental Device India Limited]
|
| D42C2 D42C7 D42C6 D40E1 D42C1 D41D8 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-202
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 3A I(C) | TO-202
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 2A I(C) | TO-202AC
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 3A I(C) | TO-202 晶体管|晶体管|叩| 30V的五（巴西）总裁| 3A条一（c）|02
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-202AC
|
ZF Electronics, Corp.
|
| PUMH13115 PEMH13-PUMH13-15 |
NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.
NPN/NPN resistor-equipped transistors R1 = 4.7 k? R2 = 47 k?
|
NXP Semiconductors
|
| CSC1675O CSC1394R |
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | TO-92 晶体管|晶体管|叩| 30V的五（巴西）总裁|2
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20MA I(C) | TO-92 晶体管|晶体管|叩| 30V的五（巴西）总裁| 20mA的一（c）|2
|
NEC, Corp.
|
