PART |
Description |
Maker |
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
|
RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022- |
5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大 5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER Single-band power amplifiers The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
|
ACPM-7812-TR1 |
Amplifier. Other CDMA/AMPS power amplifier module 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Agilent Technologies, Inc.
|
2SC3670 E000875 |
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM OWER AMPLIFIER APPLICATIONS) RECTIFIER STANDARD SINGLE 1A 100V 100 30A-ifsm 5uA-ir 1V-vf DO-41 1K/BULK STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS From old datasheet system NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM OWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
HMC441 HMC440QS16G HMC441LM1 |
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER/ 7.0 - 15.5 GHz HBT DIGITAL PHASE-FREQUENCY DETECTOR/ 10 - 1300 MHz/ w/ INTEGRATED 5-BIT COUNTER/ 10 - 2800 MHz 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz
|
美国讯泰微波有限公司上海代表 HITTITE[Hittite Microwave Corporation]
|
UPC2710TB1 UPC2710TB-E3 |
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
NEC
|
2SC4684 E000977 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) From old datasheet system STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
2SA1242 E000487 |
TRANSISOTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS TRANSISOTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) From old datasheet system
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
2SA1160 E000473 |
From old datasheet system STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
30MPA0562 |
28000 MHz - 31000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 28.0-31.0 GHz GaAs MMIC Power Amplifier
|
MIMIX[Mimix Broadband]
|
CMM2321 PB-CMM2321-AK CMM2321-AK CMM2321-AK-000T |
2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 2.4 to 2.5 GHz 1 Watt Power Amplifier
|
MIMIX[Mimix Broadband]
|