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IS61DDP2B21M18AA1A2 - 1Mx18, 512Kx36 18Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM

IS61DDP2B21M18AA1A2_4814470.PDF Datasheet


Part No.	IS61DDP2B21M18A/A1/A2 IS61DDP2B251236A/A1/A2
Description	1Mx18, 512Kx36 18Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM
File Size	547.37K / 31 Page
Maker	Integrated Silicon Solution, Inc
Homepage	http://www.issi.com/
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Full text search : 1Mx18, 512Kx36 18Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM

Related Part Number

PART	Description	Maker
IS61DDP2B21M18A/A1/A2 IS61DDP2B251236A/A1/A2	1Mx18, 512Kx36 18Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc
IS61DDPB41M18A/A1/A2 IS61DDPB451236A/A1/A2	1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc
K7K1636T2C K7K1618T2C K7K1618T2C-EI330 K7K1618T2C-	512Kx36 & 1Mx18 DDRII CIO b2 SRAM 1M X 18 DDR SRAM, 0.45 ns, PBGA165	Samsung semiconductor
K7N163631B-QC16 K7N163631B-QFCI25 K7M161835B-QC65	512Kx36 & 1Mx18 Pipelined NtRAM	Samsung Electronic SAMSUNG[Samsung semiconductor]
K7B161835B K7B163635B	512Kx36 & 1Mx18 Synchronous SRAM	Samsung semiconductor
K7M161825M K7M163625M	512Kx36 & 1Mx18 Flow-Through NtRAM-TM	Samsung semiconductor
K7M163635B-PC65 K7M163635B-PI65 K7M163635B-QI65 K7	512Kx36 & 1Mx18 Flow-Through NtRAM	Samsung semiconductor
KM718V089 KM736V989	512Kx36 & 1Mx18 Synchronous SRAM	SAMSUNG SEMICONDUCTOR CO. LTD.
K7N163645M K7N161845M	512Kx36 & 1Mx18-Bit Pipelined NtRAMTM	Samsung Electronic SAMSUNG[Samsung semiconductor]
K7N163601M K7N161801M	512Kx36 & 1Mx18-Bit Pipelined NtRAM TM	SAMSUNG[Samsung semiconductor]
K7K1636T2C K7K1618T2C	512Kx36 & 1Mx18 DDRII CIO b2 SRAM	Samsung semiconductor

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