| PART |
Description |
Maker |
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KMM466F404BS2 |
4M x 64 DRAM SODIMM(4M x 64 ?ㄦ?RAM妯″?)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYM71V8M655AT6-S HYM71V8M655ALT6-S |
8M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144 SODIMM-144
|
Hynix Semiconductor, Inc.
|
| HYM5V64804TZG-50 HYM5V64834TZG-50 HYM5V64834SLTZG- |
8M X 64 EDO DRAM MODULE, 50 ns, PDMA144 SODIMM-144
|
Hynix Semiconductor, Inc.
|
| HYM71V8M635BT6-K HYM71V8M635BT6-H HYM71V8M635BLT6- |
8M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 SODIMM-144
|
Hynix Semiconductor, Inc.
|
| DPSD8MX64RSW-10CT DPSD8MX64RSW-12C |
8M X 64 SYNCHRONOUS DRAM MODULE, ZMA144 SODIMM-144
|
Micross Components
Austin Semiconductor, Inc
|
| HMP451S6MMP8C-S6 HMP451S6MMP8C-Y5 |
DDR DRAM MODULE, ZMA200 ROHS COMPLIANT, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| M466F0804DT1-L |
8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh
|
SAMSUNG[Samsung semiconductor]
|
| HMP351S6AFR8C-S6 HMP351S6AFR8C-S5 HMP351S6AFR8C-Y5 |
512M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 2Gb version A
|
Hynix Semiconductor, Inc.
|
| M470T6464AZ3 M470T5669AZ0-CLE6_D5_CC M470T2864AZ3- |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC
|
Samsung semiconductor
|
| KVR266X64SC25 KVR266X64SC25_512 KVR266X64SC25/512 |
512MB 266MHz DDR Non-ECC CL2.5 SODIMM
MEMORY MODULE SPECIFICATION 512MB 64M x 64-BIT DDR266 CL2.5 200-PIN SODIMM
|
ETC
List of Unclassifed Manufacturers
|
