| PART |
Description |
Maker |
| AAA2800 AAA2801 |
(AAA2800 Series) Static Column Decode Mode CMOS 256k x 1 DRAM
(AAA2800 Series) Page Mode CMOS 256k x 1 DRAM
|
NMB Technologies
|
| HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
|
SIEMENS AG
|
| AS4C256K16F0-30TC AS4C256K16F0-50TC AS4C256K16F0-5 |
5V 256K X 16 CMOS DRAM (Fast Page Mode)
256K X 16 FAST PAGE DRAM, 50 ns, PDSO40
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Alliance Semiconductor Corp...
Electronic Theatre Controls, Inc.
|
| MCM514256A MCM51L4256A |
256K x 4 CMOS DRAM
|
Motorola
|
| MCM51L4256B |
256K x 4 CMOS DRAM
|
Motorola
|
| AM90CL255-08JC AM90CL255-15JC AM90CL255-12PC |
256K X 1 NIBBLE MODE DRAM, 80 ns, PQCC18
256K X 1 NIBBLE MODE DRAM, 150 ns, PQCC18
256K X 1 NIBBLE MODE DRAM, 120 ns, PDIP16
|
ADVANCED MICRO DEVICES INC
|
| CAT28C257 CAT28C257HN-12 CAT28C257PI-90T CAT28C257 |
256K CMOS parallel EEPROM 90ns
256K CMOS parallel EEPROM 150ns
256K CMOS parallel EEPROM 120ns
256K-Bit CMOS PARALLEL E2PROM
|
http://
CATALYST[Catalyst Semiconductor]
|
| HYB514171BJ-50 HYB514171BJ-50- HYB514171BJ-60 Q671 |
256k x 16 Bit FPM DRAM 5 V 60 ns
256k x 16 Bit FPM DRAM 5 V 50 ns
256k x 16-Bit Dynamic RAM
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| MT4C16257 |
256K x 16 FPM DRAM(256K x 16快速页面模式动态RAM)
|
Micron Technology, Inc.
|
| IDT71V416S10PHG IDT71V416S10PHGI IDT71V416S12PHG I |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PBGA48
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 10 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| LH532100B- LH532100B-1 LH532100BD-1 LH532100BN-1 L |
CMOS 2M(256K x 8) Mask-Programmable ROM
CMOS 2M (256K x 8) MROM
|
SHARP[Sharp Electrionic Components]
|
