| PART |
Description |
Maker |
| PMWD19UN PMWD19UN-01 |
DUAL uTRENCHMOS ULTRA LOW LEVEL FET
Dual uTrenchMOS (tm) ultra low level FET 双uTrenchMOSTM）超低水平场效应
From old datasheet system
Dual uTrenchMOS(TM) ultra low level FET
|
NXP Semiconductors
HIROSE ELECTRIC Co., Ltd.
PHILIPS[Philips Semiconductors]
|
| PMWD16UN PMWD16UN-01 |
Dual uTrenchMOS(TM) ultra low level FET
From old datasheet system
Dual mTrenchMOS ultra low level FET
|
Philips
|
| PMWD26UN-01 PMWD26UN |
Dual uTrenchMOS(TM) ultra low level FET
100mA CMOS Voltage Converter; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
From old datasheet system
|
Philips
|
| PMF280UN |
N-channel UTrenchMOS ultra low level FET
N-channel uTrenchmos (tm) ultra low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PMGD400UN |
Dual N-channel mTrenchMOS?ultra low level FET
Dual N-channel mTrenchMOS ultra low level FET
Dual N-channel uTrenchmos (tm) ultra low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PMF400UN |
N-channel mTrenchMOS ultra low level FET
N-channel uTrenchmos (tm) ultra low level FET
|
NXP Semiconductors
Philips Semiconductors
|
| PMGD290XN PMGD290XN115 GD290XN115 |
Dual N-channel mTrenchMOS extremely low level FET
From old datasheet system
Dual N-channel uTrenchmos (tm) extremely low level FET 860 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| ISL55290 ISL55290EVAL1Z ISL55290IUZ ISL55290IUZ-T1 |
Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Low Power Op Amp
|
Intersil Corporation
|
| ISL28290 ISL28290FRUZ-T7 ISL28290FUZ ISL28290FUZ-T |
Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Rail-to-Rail, Op Amp
|
Intersil Corporation
|
| PMV60EN PMV60EN-01 |
uTrenchMOS tm enhanced logic level FET
N-channel TrenchMOS logic level FET
3M SCOTCHCAST ELECTRICAL RESIN 5 (16 1-LB UNITS = CARTON) RoHS Compliant: Yes
UTrenchMOS enhanced logic level FET
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
