Part Number Hot Search : 
2EDWF2 FAN8412M B2612BS1 CMZ5350B THS124 4532M R3010 035150
Product Description
Full Text Search

GS8161E36BGT-200V - 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

GS8161E36BGT-200V_5266815.PDF Datasheet


 Full text search : 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs


 Related Part Number
PART Description Maker
AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
512K X 16 FLASH 3V PROM, 90 ns, PDSO48
512K X 16 FLASH 3V PROM, 70 ns, PBGA48
512K X 16 FLASH 3V PROM, 90 ns, PBGA48
512K X 16 FLASH 3V PROM, 120 ns, PDSO48
512K X 16 FLASH 3V PROM, 120 ns, PDSO44
512K X 16 FLASH 3V PROM, 90 ns, PDSO44
Spansion, Inc.
SPANSION LLC
CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72)流体系结构,通过与总线延迟(带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72)流的SRAM
Cypress Semiconductor Corp.
IDT71V424L IDT71V424S10PH IDT71V424S10PHG IDT71V42 3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT) 512K X 8 STANDARD SRAM, 15 ns, PDSO44
TRANS NPN W/RES 60 HFE NS-B1 512K X 8 STANDARD SRAM, 10 ns, PDSO36
TRANS NPN W/RES 80 HFE NS-B1
3.3V 512K x 8 Static RAM Center Pwr & Gnd Pinout
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
GS8160V36CGT-300 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5 ns, PQFP100
GSI Technology, Inc.
A28F400BX-B 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引导块闪速存储器)
Intel Corp.
TC554001FTI-85V TC554001FI-85V 512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器(为512k字8静态RAM)的
Toshiba Corporation
Toshiba, Corp.
MSM8521CBI-48D MSM8521CBI-020 MSM8521CB-020 MSM851 512K X 8 STANDARD SRAM, 20 ns, PBGA48
512K x 8 Static RAM Issue 5.2 April 2001
MOSAIC
http://
KM29N040T 512K x 8 Bit NAND Flash Memory(512K x 8NAND闪速存储器)
SAMSUNG SEMICONDUCTOR CO. LTD.
CY7C1012AV33-10BGI CY7C1012AV33-8BGI CY7C1012AV33 512K x 24 Static RAM 512K X 24 STANDARD SRAM, 8 ns, PBGA119
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
MBM29F040A-90 4M (512K ×8) BIT Flash Memoery(512K ×85V 电源电压闪速存储器)
Fujitsu Limited
 
 Related keyword From Full Text Search System
GS8161E36BGT-200V circuit GS8161E36BGT-200V semiconductor GS8161E36BGT-200V Operation GS8161E36BGT-200V BLDC motor driver GS8161E36BGT-200V Cirkuit diagram
GS8161E36BGT-200V serial GS8161E36BGT-200V upload GS8161E36BGT-200V memory GS8161E36BGT-200V filetype:pdf GS8161E36BGT-200V Pass
 

 

Price & Availability of GS8161E36BGT-200V

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.29878211021423