PART |
Description |
Maker |
MMBD452LT1G |
Dual Hot−Carrier Diodes Schottky Barrier Diodes SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
MA738 MA2Q738 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD) From old datasheet system
|
PANASONIC[Panasonic Semiconductor]
|
HSCH-9102 HSCH-9151 HSCH-9101 HSCH-9251 |
HSCH-9251 · Beamlead GaAs Schottky barrier diodes HSCH-9101 · Beamlead GaAs Schottky barrier diodes GaAs Beam Lead Schottky Barrier Diodes
|
Agilent (Hewlett-Packard) Agilent(Hewlett-Packard)
|
MA3S795E MA3S795D MA795WK MA795WA |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD)
|
PANASONIC[Panasonic Semiconductor] Matsshita / Panasonic
|
MA2YD23 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
MA784 MA2Z784 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD)
|
PANASONIC[Panasonic Semiconductor]
|
HSB88WK |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
CDBCT360-HF CDBCT340-HF CDBCT3100-HF CDBCT320-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=60V, V-R=60V, I-O=3A Halogen Free Schottky Barrier Diodes, V-RRM=40V, V-R=40V, I-O=3A Halogen Free Schottky Barrier Diodes, V-RRM=20V, V-R=20V, I-O=3A Halogen Free Schottky Barrier Diodes, V-RRM=100V, V-R=100V, I-O=3A SMD Schottky Barrier Diode
|
Comchip Technology
|
1PS70SB14 1PS70SB10_14_15_16_1 1PS70SB16 1PS70SB10 |
Schottky Barrier (Double) Diodes(肖特基势垒(双)二极 From old datasheet system Schottky barrier double diodes
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
HSB226WK |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE
|
HITACHI[Hitachi Semiconductor]
|
BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors PHILIPS[Philips Semiconductors]
|