| PART |
Description |
Maker |
| 2643005701 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| 2643004801 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| 2643300101 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| 2661022401 |
Higher Frequencies 250-1000 MHz
|
Fair-Rite Products Corp.
|
| BAR15 BAR16 BAR14 |
RF switch RF attenuator for frequencies above 10 MHz Low distortion factor
|
TY Semiconductor Co., Ltd
|
| CA3127E CA3127F CA3127H |
High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz.
|
General Electric Solid State
|
| MRF6S21050L |
The MRF6S21050L is designed for W鈥揅DMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA,
|
MOTOROLA
|
| BLF6G22-45 |
Power LDMOS transistor
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| AP30T03GH-HF AP30T03GH-HF-14 |
Lower Gate Charge Lower Gate Charge
17 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Simple Drive Requirement
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| BAR61 BAR60 Q62702-A786 Q62702-A120 |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) SILICON, PIN DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
