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GT60N321 - Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation High Power Switching Applications The 4th Generation 高功率转换应用的第四

GT60N321_5599407.PDF Datasheet

 
Part No. GT60N321
Description Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四

File Size 172.02K  /  6 Page  

Maker

Toshiba, Corp.



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Part: GT60N321
Maker: TOSHIBA
Pack: TO-3PL
Stock: 3461
Unit price for :
    50: $3.62
  100: $3.44
1000: $3.25

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