PART |
Description |
Maker |
FDD3672 FDD3672NL |
N-Channel UltraFET Trench MOSFET 100V/ 44A/ 28m N-Channel UltraFET Trench MOSFET 100V, 44A, 28mз Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 44A, 0.028 Ohms @ VGS = 10V, TO-252/DPAK Package N-Channel UltraFET Trench MOSFET 100V, 44A, 28mOhm
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FAIRCHILD[Fairchild Semiconductor]
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FDPF3860T |
100V N-Channel PowerTrench MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail N-Channel PowerTrench㈢ MOSFET 100V, 20A, 38.2mヘ N-Channel PowerTrench? MOSFET 100V, 20A, 38.2mΩ
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FAIRCHILD SEMICONDUCTOR CORP
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IRF140 |
Repetitive Avalanche Ratings TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.077ohm/ Id=28A) TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.077ohm, Id=28A) 100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
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International Rectifier
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IRF5Y540CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package THRU-HOLE (TO-257AA) 100V, N-CHANNEL POWER MOSFET N-CHANNEL(Vdss=100V Rds(on)=0.058ohm Id=18A*) POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.058ohm, Id=18A*)
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IRF[International Rectifier]
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FQU8P10 FQD8P10 FQD8P10TF FQD8P10TM FQU8P10TU |
100V P-Channel QFET 100V P-Channel MOSFET 6.6 A, 100 V, 0.53 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package 34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A) Avalanche Energy Ratings
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IRF[International Rectifier]
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FQT7N10 FQT7N10TF |
100V N-Channel MOSFET 1.7 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET 100V N-Channel QFET
|
Fairchild Semiconductor, Corp.
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FQB34P10TM FQB34P10TM-F085 |
100V P-Channel MOSFET -33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V
|
Fairchild Semiconductor
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AM29DL162DT120WCE AM29DL162DT120WCEN AM29DL163DB12 |
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A JANTXV2N6792 with Standard Packaging x8/x16 Flash EEPROM 100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A IRLF120 with Standard Packaging 500V Single N-Channel Hi-Rel MOSFET in a TO-204AE package; A IRF460 with Standard Packaging 400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A IRFF310 with Standard Packaging 100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package; A IRFY140CM with Standard Packaging 60V Single N-Channel Hi-Rel MOSFET in a D3 package; A IRFMJ044 with Standard Packaging -100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package; A IRFY9140CM with Standard Packaging x8/x16闪存EEPROM 55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package; A IRF5YZ48CM with Standard Packaging x8/x16闪存EEPROM 400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A JANTXV2N6786 with Standard Packaging EEPROM -100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package; A IRF5Y9540CM with Standard Packaging x8/x16闪存EEPROM -100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package; A IRF9130 with Standard Packaging x8/x16闪存EEPROM 100V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package; A JANTX2N6782U with Standard Packaging x8/x16闪存EEPROM 1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package; A IRFAG40 with Standard Packaging EEPROM
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PLX Technology, Inc.
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FDM3622_07 FDM3622 FDM362207 |
N-Channel PowerTrench? MOSFET 100V, 4.4A, 60mΩ N-Channel PowerTrench㈢ MOSFET 100V, 4.4A, 60mヘ
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FAIRCHILD[Fairchild Semiconductor]
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IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 8A条(丁)|05AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 4.9AI(四)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 1A条(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 28A条(丁)|04AE TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五(巴西)直| 600毫安(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五(巴西)直|5A条(丁)|04AE
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Black Box, Corp. Bourns, Inc. Vishay Intertechnology, Inc. Samsung Semiconductor Co., Ltd. 3M Company
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