| PART |
Description |
Maker |
| ADD8701 ADD8701ACP ADD8701ACP-R2 ADD8701ACP-REEL7 |
12-Channel Gamma Buffers with VCOM Buffer
Low Cost, 16 V 12-Channel Buffer plus Integrated High Drive Amplifier
|
Analog Devices, Inc.
AD[Analog Devices]
|
| FDFMA2N028Z08 FDFMA2N028Z |
20V Integrated N-Channel PowerTrenchMOSFET and Schottky Diode
Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode 20V, 3.7A, 68mヘ
Integrated N-Channel PowerTrench庐 MOSFET and Schottky Diode 20V, 3.7A, 68m惟
Integrated N-Channel PowerTrench? MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
|
Fairchild Semiconductor
|
| PM8316 |
High Density 84-Channel T1/E1/J1 Framer with Integrated VT/TU Mappers and M13
|
PMC-Sierra
|
| MIC5019EB |
Ultra-Small High-Side N-Channel MOSFET Driver with Integrated Charge Pump
|
Micrel Semiconductor
|
| NIS5112 |
an integrated switch utilizing a high side N−channel FET driven by an internal charge pump
|
ON Semiconductor
|
| BF1009S Q62702-F1628 Q62702-C2595 Q62702-C2607 Q62 |
NPN Silicon AF Transistors (For AF driver and output stages High collector current)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BUK212-50Y BUK212_217_50Y-01 BUK217-50Y |
BUK212-50Y; BUK217-50Y; Single channel high-side TOPFET(tm)
Single channel high-side TOPFET⑩
From old datasheet system
Single channel high-side TOPFET TM
Single channel high-side TOPFET垄芒
Single channel high-side TOPFET?/a>
25 A BUF OR INV BASED PRPHL DRVR, PSSO4
Single channel high-side TOPFET??/span>
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| ADUM5242BRZ ADUM5240BRZ ADUM5241 |
Dual-Channel Isolators with Integrated DC/DC Converter, 50 mW SPECIALTY ANALOG CIRCUIT, PDSO8
Dual-Channel Isolators with Integrated DC/DC Converter, 50 mW 双通道隔离器的集成DC / DC转换器，50毫瓦
|
Analog Devices, Inc.
ANALOG DEVICES INC
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MAX16833AUE/V MAX1683311 |
High-Voltage HB LED Drivers with Integrated High-Side Current Sense
|
Maxim Integrated Products
|
