| PART |
Description |
Maker |
| AK49064SP-10 AK44064SP-10 AK44256SN-12 AK411024SRM |
64K X 9 MULTI DEVICE DRAM MODULE, 100 ns, SMA30
64K X 4 MULTI DEVICE DRAM MODULE, 100 ns, SMA22
256K X 4 MULTI DEVICE DRAM MODULE, 120 ns, SMA22
1M X 1 MULTI DEVICE DRAM MODULE, 150 ns, SMA22
128K X 1 MULTI DEVICE DRAM MODULE, 150 ns, CDIP18
64K X 2 MULTI DEVICE DRAM MODULE, 150 ns, CDIP18
|
|
| M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| HN7G02FU |
Multi Chip Discrete Device Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.
|
TOSHIBA
|
| HN4C05JU |
MULTI CHIP DISCRETE DEVICE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
| TPCF8B0107 |
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| M39P0R9070E0ZADF M39P0R9070E0 M39P0R9070E0ZAD M39P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| CE201210-6N8J CE201210-5N6J CE201210-4N7J CE201210 |
IC,MOT,MC68HC908GR8CP, DIP-28, MCU FLASH 8BIT 8MHZ 4K
IC,MCU,MC68HC908JB8ADW,8-BIT SOIC-28,21 I/O,3MHZ
IC,MCU,MC68HC711E9CFN2,8-BIT 2MHz,PLCC52
8-BIT, OTPROM, 2.1 MHz, MICROCONTROLLER, PDIP20
IC,MCU,MC68HC908KX8CDW,8-BIT SOIC-16,13 I/O,8MHZ
Multi-Layer Chip Inductors 1 ELEMENT, 0.12 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0056 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0027 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
IC,MCU,MC68HC705C9ACFN,8-BIT PLCC-44,31 I/O,2MHZ 多层片式电感
Multi-Layer Chip Inductors 1 ELEMENT, 0.39 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns Inc.
Bourns, Inc.
|
| AEPDH1M8LB-12 AEPDS1M8LB-85P AEPDH1M8LB-10P AEPDH1 |
1M X 8 MULTI DEVICE DRAM MODULE, 120 ns, SMA28 SIMM-28
1M X 8 MULTI DEVICE DRAM MODULE, 85 ns, SMA28 SIMM-28
1M X 8 MULTI DEVICE DRAM MODULE, 100 ns, SMA28 SIMM-28
|
Fox Electronics
|
| MT2LSYT3272B2G-12L MT4LSYT6472B2G-12L |
32K X 72 MULTI DEVICE SRAM MODULE, 12 ns, DMA160
64K X 72 MULTI DEVICE SRAM MODULE, 12 ns, DMA160
|
RECOM Electronic GmbH
|
| SYS32512ZK-010 SYS32512ZK-012 SYS32512ZK-015 SYS32 |
512 K x 32 Static RAM
512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, PZMA72 PLASTIC, ZIP-72
512K X 32 MULTI DEVICE SRAM MODULE, 10 ns, PZMA72 PLASTIC, ZIP-72
512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, PSMA72 PLASTIC, SIMM-72
512K X 32 MULTI DEVICE SRAM MODULE, 10 ns, PSMA72 PLASTIC, SIMM-72
512 K x 32 Static RAM 512亩32静态RAM
|
Amphenol, Corp.
MOSAIC
http://
Fujitsu, Ltd.
NXP Semiconductors N.V.
|
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