| PART |
Description |
Maker |
| K7N321831C K7N323631C-QI160 K7N323631C-EC160 K7N32 |
1Mx36 & 2Mx18 Pipelined NtRAM
1M X 36 ZBT SRAM, 3.5 ns, PQFP100
1M X 36 ZBT SRAM, 3.5 ns, PBGA165
1M X 36 ZBT SRAM, 2.6 ns, PQFP100
|
Samsung semiconductor
|
| CY7C1350F CY7C1350F-100AC CY7C1350F-100AI CY7C1350 |
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.8 ns, PBGA119
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 4.5 ns, PQFP100
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.6 ns, PBGA119
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.6 ns, PQFP100
CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, PE-SR047FL (.047" RE-SHAPABLE) 128K X 36 ZBT SRAM, 3.5 ns, PQFP100
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.8 ns, PQFP100
4-Mb (128K x 36) Pipelined SRAM with Nobl(TM) Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| K7N803601B K7N801801B K7N803601B-PI160 K7N801801B- |
256Kx36 & 512Kx18 Pipelined NtRAM
256K X 36 ZBT SRAM, 3.5 ns, PQFP100
512K X 18 ZBT SRAM, 3.5 ns, PQFP100
|
Samsung semiconductor
|
| MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128 |
3.3V I/O28K x 32，Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器)
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
3.3V I/O28K x 36，Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36，流量通过ZBT SRAM的电压（3.3V或输输出Mb的流通式同步静态存储器
2.5V I/O28K x 32，Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32，流量通过ZBT SRAM的电压（2.5V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
| CY7C1464AV33-167BGXI CY7C1464AV33-200BGXC CY7C1462 |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBLArchitecture 512K X 72 ZBT SRAM, 3.4 ns, PBGA209
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBLArchitecture 512K X 72 ZBT SRAM, 3.2 ns, PBGA209
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBLArchitecture 2M X 18 ZBT SRAM, 2.6 ns, PBGA165
2M X 18 ZBT SRAM, 3.2 ns, PQFP100
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1351F CY7C1351F-100AC CY7C1351F-100AI CY7C1351 |
4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 11 ns, PBGA119
4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 8 ns, PQFP100
4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 8 ns, PBGA119
4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture
4-Mb (128K x 36) Flow-through SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CY7C1370D-250BZI CY7C1372D-167BGC CY7C1372D-167BZC |
18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 3.4 ns, PQFP100
18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 2.6 ns, PBGA165
18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 2.6 ns, PBGA119
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| AS7C332MNTF18A.V1.2 AS7C332MNTF18A-85TQIN AS7C332M |
3.3V 2M x 18 Flowthrough SRAM with NTD 2M X 18 ZBT SRAM, 10 ns, PQFP100
3.3V 2M x 18 Flowthrough SRAM with NTD 2M X 18 ZBT SRAM, 7.5 ns, PQFP100
From old datasheet system
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| AS7C33512NTD32_36A AS7C33512NTD32-36A.V2.8 AS7C335 |
3.3V 512K x 32/36 Pipelined SRAM with NTD 3.3流水线为512k × 32/36与新台币的SRAM
3.3V 512K x 32/36 Pipelined SRAM with NTD 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
3.3V 512K x 32/36 Pipelined SRAM with NTD 512K X 32 ZBT SRAM, 3.8 ns, PQFP100
From old datasheet system
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor Corp...
|
| CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的（256 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IS61NP25618-133B2 IS61NP25618-133B2I IS61NP25618-1 |
256K X 18 ZBT SRAM, 4.2 ns, PBGA119 PLASTIC, BGA-119
256K X 18 ZBT SRAM, 3.8 ns, PBGA119 PLASTIC, BGA-119
256K X 18 ZBT SRAM, 5 ns, PQFP100
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
