PART |
Description |
Maker |
IHW40N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
IHW20N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
IHW30N90R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
IHW15N120E1 |
Reverse conducting IGBT with monolithic body Diode for soft-switching
|
Infineon Technologies A...
|
IKW40N65WR5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
5SHX10H6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
5SHX04D4502 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
5SHX26L4510 |
Reverse Conducting Integrated Gate-Commutated Thyristor 1590 A, 4500 V, SCR
|
The ABB Group ABB, Ltd.
|
IXRA15N120 |
IGBT with Reverse Blocking capability
|
IXYS
|
STGP7NB60F STGD7NB60FT4 STGD7NB60F |
14 A, 600 V, N-CHANNEL IGBT, TO-220AB Transient Surge Protection Thyristor; Thyristor Type:Sidac; Package/Case:MS-013; Reel Quantity:1500; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:70pF; Forward Voltage:5V; Holding Current:120mA; Leakage Current:5uA RoHS Compliant: NA N-CHANNEL 7A 600V TO-220/DPAK POWERMESH IGBT N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT
|
意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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