| PART |
Description |
Maker |
| SST39VF512 SST39VF512-70-4C-NH SST39VF010 SST39VF0 |
512 Kbit/1 Mbit (x8) multi-purpose flash
From old datasheet system
(SST39VFxxx / SST39LFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
x8 Flash EEPROM
|
SST[Silicon Storage Technology Inc]
SST[Silicon Storage Technology, Inc]
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| S79FL256S |
256 Mbit (32 MB)/512 Mbit (64 MB), 3 V, Dual-Quad SPI Flash
|
Cypress Semiconductor
|
| M36P0R9070E0 |
512 Mbit Flash memory 128 Mbit (Burst) PSRAM
|
Numonyx
|
| SST25WF040-40-5I-QAE SST25WF040-40-5I-QAF SST25WF0 |
128K X 8 FLASH 1.8V PROM, PDSO8
512 Kbit / 1 Mbit / 2 Mbit / 4Mbit 1.8V SPI Serial Flash
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc
Microchip Technology Inc.
|
| M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
| S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
| CY62157EV18 |
8-Mbit (512 K x 16) Static RAM
|
Cypress Semiconductor
|
| HYI39S512160A |
512-Mbit Synchronous DRAM
|
Qimonda
|
| CY62157E |
8-Mbit (512 K x 16) Static RAM
|
Cypress Semiconductor
|
| CY7C1443AV33 CY7C1441AV33-133AXC CY7C1441AV33-133A |
36-Mbit (1 M x 36/2 M x 18/512 k x 72) Flow-Through SRAM
|
Cypress Semiconductor
|
