PART |
Description |
Maker |
R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE 100 A, 200 V, SILICON, RECTIFIER DIODE 2200 A, 800 V, SILICON, RECTIFIER DIODE 2200 A, 600 V, SILICON, RECTIFIER DIODE 2200 A, 400 V, SILICON, RECTIFIER DIODE 450 A, 150 V, SILICON, RECTIFIER DIODE 550 A, 50 V, SILICON, RECTIFIER DIODE 550 A, 150 V, SILICON, RECTIFIER DIODE 2500 A, 1300 V, SILICON, RECTIFIER DIODE 300 A, 900 V, SILICON, RECTIFIER DIODE 1800 A, 200 V, SILICON, RECTIFIER DIODE 1200 A, 3100 V, SILICON, RECTIFIER DIODE 2000 A, 2300 V, SILICON, RECTIFIER DIODE 3600 A, 2300 V, SILICON, RECTIFIER DIODE 100 A, 150 V, SILICON, RECTIFIER DIODE
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POWEREX INC
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MXD1013 MXD1013PA MXD1013PD MXD1013SA MXD1013SE MX |
3-in-1 silicon delay line. Output delay 45ns. 3-in-1 silicon delay line. Output delay 30ns. 3-in-1 silicon delay line. Output delay 90ns. 3-in-1 silicon delay line. Output delay 12ns. 3-in-1 silicon delay line. Output delay 25ns. Silver Mica Capacitor; Capacitance:11pF; Capacitance Tolerance: 1pF; Series:CD4; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:2.5mm; Leaded Process Compatible:No RoHS Compliant: No 3-in-1 silicon delay line. Output delay 70ns. 3-in-1 silicon delay line. Output delay 75ns. 3-in-1 silicon delay line. Output delay 50ns. 3-in-1 silicon delay line. Output delay 20ns. 3-in-1 silicon delay line. Output delay 80ns. 3-in-1 silicon delay line. Output delay 15ns.
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Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products] Maixm MAXIM - Dallas Semiconductor
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SM30CXC614 SM30CXC624 SM14CXC170 SM02CXC190 SM02CX |
1160 A, 3000 V, SILICON, RECTIFIER DIODE 1106 A, 3000 V, SILICON, RECTIFIER DIODE 440 A, 1400 V, SILICON, RECTIFIER DIODE 760 A, 200 V, SILICON, RECTIFIER DIODE 440 A, 200 V, SILICON, RECTIFIER DIODE 940 A, 2000 V, SILICON, RECTIFIER DIODE 1610 A, 2600 V, SILICON, RECTIFIER DIODE
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WESTCODE SEMICONDUCTORS LTD
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RBU801M RBU801M10 RBU804M RBU805M RBU806M RBU801M- |
8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
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RECTRON LTD Rectron Semiconductor
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1N4748A 1N4732A 1N4758A 1N4745A 1N4754A 1N4744A 1N |
Silicon Power Z-Diode for Voltage Stabilization(稳定电压22V,稳定电1.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电2V的,稳定电流一十一点五毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.9V,稳定电4mA的硅功率齐纳二极 硅功Z -二极管的电压稳定(稳定电压均.9V,稳定电流六十四毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压16V,稳定电5.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电6V的稳定电流一十五点五毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压9.1V,稳定电8mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.1V,稳定电8毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压12V,稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的稳定电压12V的稳定电压,稳定电流21毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压75V,稳定电.3mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电5V的,稳定电流三点三毫安的硅功率齐纳二极管 Silicon Power Z-Diodes 硅功率Z -二极 Silicon Power Z-Diode for Voltage Stabilization(稳定电压13V,稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电3V的,稳定电流十九毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压20V,稳定电2.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电0V的,稳定电流十二点五毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压8.2V,稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.2V,稳定电流三一毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压6.2V,稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.2V,稳定电1毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.6V,稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.6V的稳定电9毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压4.7V,稳定电3mA的硅功率齐纳二极 Silicon Power Z-Diode for Voltage Stabilization(稳定电压5.1V,稳定电9mA的硅功率齐纳二极 From old datasheet system Silicon Power Z?Diodes
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Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. TFUNK[Vishay Telefunken]
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JAN1N5300U JANS1N5314UR-1 1N5283UR-1 1N5284UR-1 1N |
Current Limiter Diode Single Inverter Gate 5-SOT-23 -40 to 85 1.5 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 0.43 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB 4-Pin DIP Phototransistor Output Optocoupler 1.4 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 3.6 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 0.27 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 4.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 0.33 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 1.4 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 0.91 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 0.39 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB CURRENT REGULATOR DIODES 0.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB Pulse-Width-Modulation (Pwm) Control Circuit 16-SOIC 0 to 70 CURRENT REGULATOR DIODES
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MICROSEMI[Microsemi Corporation] Microsemi, Corp. MICROSEMI CORP-LAWRENCE
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ZMV831ATA ZMV831BTA ZV831 ZV831BV2TA ZMV832ATA ZMV |
SILICON 28V HYPERABRUPT VARACTOR DIODES SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SILICON 28V HYPERABRUPT VARACTOR DIODES 8VHYPERABRUPT变容二极 25 Volt hyperabrupt varactor diode SHELL, DSUB, 25, 90, BLK, POY, S (1011898) SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, VARIABLE CAPACITANCE DIODE SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SILICON 28V HYPERABRUPT VARACTOR DIODES UHF BAND, 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE BACKSHL, D-SUB, 9POS, MTL, NIPL, (914794) 22 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE 28 V, silicon hyperabrupt varactor diode SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
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ZETEX[Zetex Semiconductors] Zetex Semiconductor PLC
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2SK1228TMG MA3027-LH MA3027TSK MA3150-LTMG MA3360- |
100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 2.7 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 0.1 A, SILICON, SIGNAL DIODE SILICON, PIN DIODE UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 0.035 A, 2 ELEMENT, SILICON, SIGNAL DIODE
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PANASONIC CORP
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CPR2-040TRLEADFREE CPR2-010TRLEADFREE CPR2-120TRLE |
2 A, 400 V, SILICON, RECTIFIER DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE 2 A, 1200 V, SILICON, RECTIFIER DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
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Central Semiconductor, Corp. CENTRAL SEMICONDUCTOR CORP
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BZG03C BZG03C120 BZG03C13 BZG03C51 BZG03C15 BZG03C |
Silicon Z-Diodes Silicon ZDiodes From old datasheet system Silicon Z-Diode(稳压应用电压范围10-270V的齐纳二极管)
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Vishay Telefunken VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
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BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve... From old datasheet system NPN Silicon Transistors with High Reverse Voltage Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% NPN Silicon RF Transisrors NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管(高耐压l低集电极发射极饱和电压)
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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